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2SC2458-GR

Toshiba

2SC2458-GR by Toshiba

The Toshiba 2SC2458-GR is a NPN BJT transistor with max VCEsat of 0.25V, hFE of 200, and fT of 80MHz. Ideal for amplifier applications due to its low power dissipation (0.2W) and max collector-emitter voltage of 50V. Package: PLASTIC/EPOXY, Terminals: THROUGH-HOLE, Temp: 125°C.

Median Price

$14.950

Lifecycle Status

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American Microsemiconductor Inc.

USA . 250 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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VNN

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Nova Conductors

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Corohmni

South Africa . 93 parts In-Stock

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Ampacity Inc.

Singapore . 1,606 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the 2SC2458-GR by Toshiba, a top-quality Small Signal Bipolar Junction Transistor designed to elevate your amplification projects to new heights. Toshiba's reputation for excellence in electronic components guarantees reliability and performance that surpasses expectations. Ideal for amplifier applications, this NPN transistor offers a low VCEsat of 0.25V and a high DC current gain of 200, ensuring optimal functionality. Upgrade your electronic designs with the 2SC2458-GR and experience the value, benefits, and advantages that only Toshiba can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

Commonly used in amplification circuits due to its high input impedance and low output impedance.

Configuration: SINGLE

Simplifies circuit design and makes it easy to use in single transistor applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in audio and signal processing applications.

Maximum VCEsat: 0.25 V

Low saturation voltage helps in reducing power dissipation and improving efficiency of the amplifier circuit.

Package Shape: RECTANGULAR

Standard shape that can be easily mounted on PCBs, making it convenient for integration into electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto PCBs, ensuring a secure connection.

No. of Terminals: 3

Simple design with minimal terminals, reducing complexity in circuit layout.

Maximum Power Dissipation (Abs): 0.2 W

Can handle power dissipation efficiently, ensuring stable operation under normal conditions.

Package Style (Meter): IN-LINE

Compact package style that saves space on the PCB and allows for dense circuit layouts.

Minimum DC Current Gain (hFE): 200

High current gain ensures faithful amplification of input signals with minimal distortion.

Maximum Operating Temperature: 125 °C

Can operate reliably at high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes signal distortion and improves high-frequency performance of the transistor.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage handling capacity for most amplifier applications, ensuring reliability in operation.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics such as high gain and low noise, making it ideal for amplification tasks.

Maximum Collector Current (IC): 0.15 A

Able to handle moderate current levels, suitable for small signal amplification without overloading the transistor.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides reliable electrical and mechanical connections, ensuring long-term stability in circuit operation.

Terminal Position: SINGLE

Simplifies PCB layout and soldering process, making it easy to integrate into electronic designs.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for amplification of high-frequency signals with minimal distortion, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2458-GR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC2458-GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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