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2SC2713-BL(TE85LF)

Toshiba

2SC2713-BL(TE85LF) by Toshiba

Toshiba's 2SC2713-BL(TE85LF) is a NPN BJT transistor with VCEsat of 0.3V, hFE of 350, and IC of 0.1A. Ideal for amplifier applications, it operates at up to 125°C with a max VCE of 120V. The GULL WING terminal form and small outline package make it suitable for surface mount designs.

Median Price

$0.211

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Arrow

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Chip1Stop

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$0.177

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Avnet

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Overview

Upgrade your electronics with the high-quality 2SC2713-BL(TE85LF) by Toshiba. As a leading manufacturer in the industry, Toshiba delivers top-notch Small Signal Bipolar Junction Transistors for various amplifier applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 350, this NPN transistor offers superior performance and reliability. Trust Toshiba to provide innovative technology that enhances your projects and brings value to your designs. Experience the benefits of precision engineering with the 2SC2713-BL(TE85LF) and elevate your electronic creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the transistor, making it more reliable and durable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to use in amplifier circuits.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on a PCB, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

The low saturation voltage of 0.3V ensures efficient operation and minimal power loss in the amplifier circuit.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and reliable electrical connections in the circuit.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this transistor can handle moderate power levels in amplifier applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 120 V

The high collector-emitter voltage rating of 120V allows this transistor to be used in circuits with higher voltage requirements.

Minimum DC Current Gain (hFE): 350

The high DC current gain of 350 ensures the transistor provides sufficient current amplification in amplifier circuits.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency of 100MHz indicates the transistor can effectively amplify signals up to this frequency range.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2713-BL(TE85LF) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2713-BL(TE85LF) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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