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2SC2412KT146Q

ROHM

2SC2412KT146Q by ROHM

ROHM 2SC2412KT146Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and fT of 180MHz. Ideal for amplifier applications due to its small outline package and max collector-emitter voltage of 50V. Suitable for surface mount designs with gull wing terminals.

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Overview

Unlock the power of innovation with the ROHM 2SC2412KT146Q Small Signal Bipolar Junction Transistor. Manufactured by industry leader ROHM, this NPN transistor offers exceptional quality and reliability for amplifier applications. With a compact package design and high DC current gain, this transistor delivers superior performance and efficiency. Experience seamless integration with its surface mount capability and maximize your project's potential with a maximum operating temperature of 150°C. Elevate your designs with the ROHM 2SC2412KT146Q and revolutionize your electronics projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and can withstand high temperatures, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making them suitable for signal amplification.

Configuration: SINGLE

Single configuration simplifies the circuit design and layout, making it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal amplifier circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing production costs.

Maximum VCEsat: 0.4 V

Low VCEsat voltage minimizes power loss and improves efficiency in the transistor's operation.

Package Shape: RECTANGULAR

Rectangular package shape provides compatibility with standard PCB layouts, facilitating easy installation and maintenance.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and ease of soldering, ensuring reliable electrical connections.

No. of Terminals: 3

Three terminals provide simple connectivity for basic amplifier circuits, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation allows for efficient operation and prevents overheating, ensuring the longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and reliable amplification of signals, resulting in consistent performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for use in a variety of environments and applications without overheating.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating enables the transistor to handle a wide range of input signals and voltages.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in electronic devices, making the transistor suitable for various applications.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current rating allows for reliable performance in amplifier circuits without the risk of overload.

Terminal Finish: TIN SILVER COPPER

Durable terminal finish ensures reliable connections and prevents corrosion, extending the lifespan of the transistor.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and layout, allowing for easy integration into different electronic systems.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures quick and efficient assembly during production, reducing manufacturing time and costs.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints and reliable connections during the manufacturing process.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables the transistor to amplify high-frequency signals accurately, making it ideal for various applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2412KT146Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC2412KT146Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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