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2SC2712-Y(TE85L,F)

Toshiba

2SC2712-Y(TE85L,F) by Toshiba

Toshiba's 2SC2712-Y(TE85L,F) is a NPN BJT transistor with max VCEsat of 0.25V, hFE of 120, and fT of 80MHz. Ideal for amplifier applications due to its low power dissipation (0.15W) and high collector-emitter voltage (50V). Suitable for surface mount designs with gull wing terminals in a small outline package.

Median Price

$0.116

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Overview

Upgrade your electronics with the 2SC2712-Y(TE85L,F) by Toshiba, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With Toshiba's reputation for excellence in manufacturing, this NPN transistor offers reliable performance and durability. Its low VCEsat of 0.25V and high hFE of 120 ensure optimal efficiency, while its compact design and surface mount capability make it easy to integrate into your projects. Experience superior quality and performance with the 2SC2712-Y(TE85L,F) and take your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors offer high efficiency and fast switching speeds, making them ideal for amplifier circuits.

Configuration: SINGLE

This single configuration simplifies circuit design and saves space on the PCB.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing production time and cost.

Maximum VCEsat: 0.25V

Low saturation voltage minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

The rectangular shape is compact and space-saving, ideal for small electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connections and easy soldering during assembly.

No. of Terminals: 3

The three terminals allow for easy connection in amplifier circuits.

Maximum Power Dissipation (Abs): 0.15W

With a low power dissipation rating, the transistor operates efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact design.

Maximum Power Dissipation Ambient: 0.15W

The maximum power dissipation in an ambient environment ensures reliable performance under normal operating conditions.

Minimum DC Current Gain (hFE): 120

A high minimum DC current gain ensures stable and consistent amplification in the circuit.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the transistor to function reliably in various environments.

Maximum Collector-Base Capacitance: 3.5pF

Low capacitance minimizes signal distortion and ensures accurate amplification.

Maximum Collector-Emitter Voltage: 50V

The high collector-emitter voltage rating allows the transistor to handle higher voltages without breakdown.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.15A

The maximum collector current rating ensures the transistor can handle the required load without damage.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit layout and connection options.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand manufacturing processes without damage.

Nominal Transition Frequency (fT): 80MHz

The high nominal transition frequency allows the transistor to amplify high-frequency signals accurately.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2712-Y(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC2712-Y(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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