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2SC2412KT146S

ROHM

2SC2412KT146S by ROHM

ROHM 2SC2412KT146S is a NPN BJT transistor with VCEsat of 0.4V, hFE of 270, and IC of 0.15A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 180MHz. Suitable for surface mount designs with gull wing terminals.

Median Price

$0.087

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DigiKey

USA . 2,236 parts In-Stock

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Chip1Stop

Japan . 64,866 parts In-Stock

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Verical

USA . 64,782 parts In-Stock

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$0.087

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$0.055

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Vyrian

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Nova Conductors

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Singapore . 34,695 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Aztec Data Supply Inc.

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GreenTree Electronics

Israel . 270 parts In-Stock

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Overview

Upgrade your electronic projects with the 2SC2412KT146S by ROHM, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in amplifier applications. With a low VCEsat and high DC current gain, this NPN transistor delivers reliable power amplification while maintaining efficiency. Its small outline package and surface-mount design make it easy to integrate into your designs. Trust in ROHM's reputation for excellence and elevate your projects with the 2SC2412KT146S.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor suitable for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, providing versatility in various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the number of components required, improving overall efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power loss and improves efficiency in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape enables easy installation in compact electronic devices and PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and reliable connections in surface mount applications.

No. of Terminals: 3

Three terminals offer flexibility in circuit configurations and connections, enhancing versatility in design options.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and reduces overall footprint in electronic designs.

Minimum DC Current Gain (hFE): 270

High DC current gain ensures stable and consistent amplification performance in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in harsh environments and temperature fluctuations.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in amplification applications.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage applications with ease.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring reliable and consistent performance in various operating conditions.

Maximum Collector Current (IC): 0.15 A

High collector current rating allows for handling of larger current loads in power amplification circuits.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

High-quality terminal finish ensures reliable soldering connections and prevents oxidation for long-lasting performance.

Terminal Position: DUAL

Dual terminal position simplifies PCB layout and ensures proper alignment during assembly, reducing chances of errors.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time minimizes heat exposure and prevents damage to sensitive components during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering connections and overall reliability in surface mount applications.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for fast signal switching and amplification, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2412KT146S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC2412KT146S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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