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2SC2458GR

Continental Device India

2SC2458GR by Continental Device India

2SC2458GR by Continental Device India is a NPN BJT with max VCEsat of 0.25V, hFE of 200, and fT of 80MHz. It is used in small signal applications due to its low power dissipation, high collector-emitter voltage, and silicon element material.

Median Price

$14.950

Lifecycle Status

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American Microsemiconductor Inc.

USA . 250 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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VNN

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Nova Conductors

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MISTER SPROCKETS

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Corohmni

South Africa . 93 parts In-Stock

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Ampacity Inc.

Singapore . 1,606 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Continental Prestige Electronics

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Infinite Electronics LLP (Excess)

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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GreenTree Electronics

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the 2SC2458GR by Continental Device India! With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, this NPN transistor is perfect for a variety of applications. From amplifying signals to switching circuits, this transistor offers unparalleled performance and reliability. Trust Continental Device India to deliver top-notch products that exceed your expectations. Upgrade your electronic projects with the 2SC2458GR and experience the difference in quality and efficiency today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for audio and signal amplification applications.

Maximum VCEsat: 0.25 V

Low VCEsat voltage indicates better efficiency and lower power consumption, which is advantageous for energy-saving designs.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it convenient for assembly and integration in various devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong physical connections and are suitable for manual or automated soldering processes, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels without overheating, making it suitable for small signal applications.

Minimum DC Current Gain (hFE): 200

A high minimum DC Current Gain ensures consistent and stable amplification performance, making this transistor reliable for signal amplification tasks.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, suitable for applications in varying environmental conditions.

Maximum Collector-Base Capacitance: 3.5 pF

Low Collector-Base Capacitance minimizes signal distortion and improves high-frequency performance, making this transistor suitable for RF and high-speed signal applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum Collector-Emitter Voltage of 50 V, this transistor can handle moderate voltage levels, making it versatile for various circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and durability, making them a standard choice for general-purpose applications.

Maximum Collector Current (IC): 0.15 A

With a maximum Collector Current of 0.15 A, this transistor can handle moderate current levels, suitable for small signal amplification and switching tasks.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring reliable connections and facilitating assembly processes.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and component placement, contributing to efficient circuit board layout and space utilization.

Nominal Transition Frequency (fT): 80 MHz

With a high Nominal Transition Frequency, this transistor offers excellent high-frequency performance, making it suitable for RF and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2458GR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC2458GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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