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2SC2021

ROHM

2SC2021 by ROHM

ROHM's 2SC2021 is a NPN BJT transistor with max VCEsat of 0.4V, hFE of 120, and fT of 180MHz. Ideal for amplifier applications due to its low power dissipation (0.3W) and max collector-emitter voltage of 40V. Package style: IN-LINE, terminals: THROUGH-HOLE, suitable for small signal amplification in various electronic circuits.

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Overview

Elevate your amplifier projects with the ROHM 2SC2021 small signal bipolar junction transistor. Manufactured by a trusted industry leader, this NPN transistor offers exceptional quality and reliability. With a maximum VCEsat of 0.4V and a minimum DC current gain of 120, you can trust that this transistor will deliver superior performance in your amplifier applications. Its compact IN-LINE package and through-hole terminals make it easy to integrate into your designs. Experience the value and benefits of the 2SC2021 for yourself and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and have high input impedance, making them suitable for various applications.

Configuration: SINGLE

Simplifies circuit design and makes integration easier.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in such applications.

Maximum VCEsat: 0.4 V

Low saturation voltage results in reduced power consumption and heat generation, making the transistor efficient.

Package Shape: RECTANGULAR

Easy to mount on circuit boards and provides a compact form factor.

Terminal Form: THROUGH-HOLE

Ensures secure and reliable connections on PCBs.

Maximum Power Dissipation (Abs): 0.3 W

Can handle high power levels without risking damage, suitable for demanding applications.

Package Style (Meter): IN-LINE

Convenient for layout and assembly in circuits.

Maximum Power Dissipation Ambient: 0.3 W

Maintains stable performance even in high-temperature environments.

Minimum DC Current Gain (hFE): 120

Ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 125 °C

Can operate in a wide range of temperature conditions without compromising performance.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance reduces the chances of signal distortion in amplifier circuits.

Maximum Collector-Emitter Voltage: 40 V

Can withstand high voltages, ensuring the safety and reliability of the circuit.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and ability to operate at high frequencies.

Maximum Collector Current (IC): 0.1 A

Sufficient current-handling capacity for many amplifier applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures good solderability and electrical conductivity.

Terminal Position: SINGLE

Simplified design and easy integration into circuits.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for accurate amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2021 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC2021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

NSN

5961-14-403-2727, 5961144032727

NIIN

144032727

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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