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SMMBT2369LT1G

Onsemi

SMMBT2369LT1G by Onsemi

SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).

Median Price

$0.646

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,926 parts In-Stock

1+ parts

$1.220

100+ parts

$0.248

1k+ parts

$0.145

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1,926

$1.220

$0.248

$0.145

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Mouser Electronics

USA . 448 parts In-Stock

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$0.071

448

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$0.071

Distributors (In-Stock)

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.097

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200

$0.097

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Digiode

USA . 2,192 parts In-Stock

1+ parts

$1.159

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2,192

$1.159

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Flip Electronics

USA . 54,000 parts In-Stock

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Chip Stock

USA . 30,000 parts In-Stock

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Vyrian

USA . 12,869 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 854 parts In-Stock

1+ parts

$0.060

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-

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854

$0.060

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Corohmni

South Africa . 112 parts In-Stock

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$0.071

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112

$0.071

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.095

100+ parts

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$0.091

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100

$0.095

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$0.091

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Component Stockers USA

USA . 1,694 parts In-Stock

1+ parts

$0.150

100+ parts

$0.100

1k+ parts

$0.070

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1,694

$0.150

$0.100

$0.070

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Corphita

USA . 2,436 parts In-Stock

1+ parts

$1.098

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2,436

$1.098

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 138,496 parts In-Stock

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Lixinc

USA . 9,564 parts In-Stock

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Kulean Microsystems

USA . 7,630 parts In-Stock

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7,630

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Problanco Electronics

Mexico . 7,551 parts In-Stock

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SupplyDigital Components

Austria . 6,825 parts In-Stock

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TANS Electronics

Latvia . 3,221 parts In-Stock

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Authorized Procurement Solutions

USA . 1,926 parts In-Stock

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1,926

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GreenTree Electronics

Israel . 1,926 parts In-Stock

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1,926

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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Overview

Enhance the performance of your electronic designs with the SMMBT2369LT1G by Onsemi. Crafted with precision and expertise, Onsemi is a renowned manufacturer that guarantees top-notch quality and reliability. This NPN Small Signal Bipolar Junction Transistor is ideal for switching applications, offering seamless operation and efficiency. With its compact design and high maximum operating temperature, this transistor ensures optimal performance while saving space in your projects. Trust Onsemi to deliver excellence in every component, and elevate your creations with the SMMBT2369LT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in electronic circuits, making it versatile and compatible with different systems.

Configuration: SINGLE

Simplified design for easy integration into circuits.

Transistor Application: SWITCHING

Optimized for fast switching applications, improving efficiency and performance.

Surface Mount: YES

Enables easy and compact mounting on circuit boards.

Package Shape: RECTANGULAR

Space-efficient design for tight PCB layouts.

Terminal Form: GULL WING

Facilitates easy soldering and connection in surface mount applications.

Maximum Power Dissipation: 0.3 W

Suitable for low power applications, reducing energy consumption.

Minimum DC Current Gain (hFE): 20

Ensures stable and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, improving overall reliability.

Maximum Collector-Emitter Voltage: 15 V

Handles moderate voltage levels, suitable for many circuit designs.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability compared to other materials.

Maximum Turn On Time (ton): 12 ns

Fast turn-on time for quick response in switching applications.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels, suitable for many applications.

Maximum Turn Off Time (toff): 18 ns

Fast turn-off time for efficient switching operations.

Terminal Finish: Matte Tin (Sn) - annealed

Provides strong and reliable terminal connections for long-term use.

Terminal Position: DUAL

Allows for flexibility in circuit layout and connections.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMBT2369LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

18 ns

Maximum Turn On Time (ton):

12 ns

Trade Compliance

SMMBT2369LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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