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MSB92AS1WT1G

Onsemi

MSB92AS1WT1G by Onsemi

MSB92AS1WT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, it offers a min hFE of 25 and 0.15W power dissipation.

Median Price

$0.088

Lifecycle Status

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7

In-Stock Inventory

1k+

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Rochester

USA . 20,950 parts In-Stock

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$0.092

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$0.076

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$0.068

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$0.092

$0.076

$0.068

Verical

USA . 18,000 parts In-Stock

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$0.085

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$0.085

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Digiode

USA . 989 parts In-Stock

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$0.071

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Semtec, LLC

USA . 39,000 parts In-Stock

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Chip Stock

USA . 28,000 parts In-Stock

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Flip Electronics

USA . 27,000 parts In-Stock

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Vyrian

USA . 6,535 parts In-Stock

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Corphita

USA . 880 parts In-Stock

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$0.068

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$0.068

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Corohmni

South Africa . 238 parts In-Stock

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$0.075

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AZTECH Wire

Italy . 238 parts In-Stock

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$16.810

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Component Stockers USA

USA . 769 parts In-Stock

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$99.990

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Kepictronics

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Perfect Parts

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SupplyDigital Components

Austria . 2,102 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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UHIMA Technologies

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TANS Electronics

Latvia . 272 parts In-Stock

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Overview

Experience superior performance and reliability with the Onsemi MSB92AS1WT1G Small Signal Bipolar Junction Transistor. Manufactured by a trusted industry leader, this PNP transistor is ideal for amplifier applications. Its high-quality construction and advanced design ensure maximum power dissipation of 0.15W and a maximum collector-emitter voltage of 300V. With a minimum DC current gain of 25 and a nominal transition frequency of 50MHz, this transistor offers exceptional value and benefits to customers seeking top-notch electronic components. Trust Onsemi for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in different setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance in amplification circuits.

Surface Mount: YES

This surface mount capability allows for easy and efficient PCB assembly and soldering.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels effectively.

Maximum Collector-Emitter Voltage: 300 V

The high maximum voltage rating of 300 V enhances the versatility of this transistor for use in various voltage applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency of 50 MHz allows for high-frequency amplification, making this transistor suitable for audio and radio applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92AS1WT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92AS1WT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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