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MSB92T1G

Onsemi

MSB92T1G by Onsemi

MSB92T1G by Onsemi is a PNP BJT transistor for amplifier applications. It has a max VCEsat of 0.5V, hFE of 25, and can handle a collector-emitter voltage of 300V. With a small outline package style, it operates up to 150 °C and features a transition frequency of 50MHz.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,175 parts In-Stock

1+ parts

$0.200

100+ parts

$0.074

1k+ parts

$0.052

10k+ parts

$0.034

12,175

$0.200

$0.074

$0.052

$0.034

DigiKey

USA . 844 parts In-Stock

1+ parts

$0.200

100+ parts

$0.074

1k+ parts

$0.047

10k+ parts

-

844

$0.200

$0.074

$0.047

-

Rochester

USA . 203,850 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.020

10k+ parts

$0.018

203,850

-

$0.024

$0.020

$0.018

Verical

USA . 51,000 parts In-Stock

1+ parts

-

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51,000

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-

-

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Distributors (In-Stock)

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Digiode

USA . 1,803 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,803

$0.024

-

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Vyrian

USA . 2,080 parts In-Stock

1+ parts

$0.025

100+ parts

-

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2,080

$0.025

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Chip Stock

USA . 43,000 parts In-Stock

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43,000

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Flip Electronics

USA . 9,000 parts In-Stock

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9,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 99,157 parts In-Stock

1+ parts

$0.021

100+ parts

-

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-

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99,157

$0.021

-

-

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Corphita

USA . 232 parts In-Stock

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$0.022

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-

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232

$0.022

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-

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Corohmni

South Africa . 273 parts In-Stock

1+ parts

$0.025

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-

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273

$0.025

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Continental Prestige Electronics

USA . 192,000 parts In-Stock

1+ parts

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$0.024

192,000

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$0.024

Kepictronics

USA . 21,000 parts In-Stock

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21,000

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Problanco Electronics

Mexico . 8,145 parts In-Stock

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8,145

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 4,318 parts In-Stock

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4,318

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Kulean Microsystems

USA . 913 parts In-Stock

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913

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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677

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SupplyDigital Components

Austria . 310 parts In-Stock

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310

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT)? Look no further than the Onsemi MSB92T1G! Manufactured by Onsemi, this PNP transistor offers superior quality and performance. Ideal for amplifier applications, this single configuration transistor is designed for maximum power dissipation and operates at a high temperature range. With a low VCEsat of 0.5V and a high DC current gain of 25, this transistor provides excellent value and benefits to customers. Upgrade your electronic projects with the Onsemi MSB92T1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into a system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves efficiency in amplifier applications.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact footprint, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminal form offers reliable solder connections and easy handling during assembly.

No. of Terminals: 3

Three terminals provide the necessary connections for proper transistor operation in amplifier circuits.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation helps prevent overheating and ensures stable operation over extended periods.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain of 25 ensures reliable amplification of signals in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments without risking damage.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 300 V

High collector-emitter voltage rating makes the transistor suitable for a variety of voltage requirements in amplifier circuits.

Transistor Element Material: SILICON

Silicon material offers high reliability and excellent performance characteristics for transistor elements.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current rating of 0.15 A meets the demands of amplifier circuits without risking overload.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and consistent electrical connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and allows for easy connections in amplifier circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures proper soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables reliable soldering in various manufacturing processes.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency of 50 MHz allows for amplification of high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MSB92T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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