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MSB92WT1

Onsemi

MSB92WT1 by Onsemi

MSB92WT1 by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it has a min hFE of 25 and max power dissipation of 0.15W.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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DigiKey

USA . 238,970 parts In-Stock

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$0.040

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$0.040

Farnell

UK . 238,970 parts In-Stock

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$0.030

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Verical

USA . 235,970 parts In-Stock

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Rochester

USA . 232,970 parts In-Stock

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$0.030

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$0.025

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$0.023

232,970

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$0.030

$0.025

$0.023

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.019

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50

$0.019

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Digiode

USA . 2,100 parts In-Stock

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$0.024

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$0.024

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DigiKey Marketplace

USA . 238,970 parts In-Stock

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238,970

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Vyrian

USA . 238,944 parts In-Stock

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Chip Stock

USA . 68,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 18,000 parts In-Stock

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Semi Source

USA . 5,848 parts In-Stock

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R&J Components

USA . 2,450 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 285 parts In-Stock

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$0.019

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285

$0.019

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Argo Parts USA

USA . 2,160 parts In-Stock

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$0.019

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2,160

$0.019

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$0.019

Netroflash

USA . 1,000 parts In-Stock

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$0.019

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$0.018

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$0.018

1,000

$0.019

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$0.018

$0.018

Ampacity Inc.

Singapore . 238,550 parts In-Stock

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$0.021

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Semicontronic

India . 238,522 parts In-Stock

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$0.021

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Corphita

USA . 2,071 parts In-Stock

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$0.022

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Component Stockers USA

USA . 265,678 parts In-Stock

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265,678

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$0.020

$0.020

$0.020

Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.615

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$0.560

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$0.504

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$0.615

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$0.504

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Continental Prestige Electronics

USA . 238,970 parts In-Stock

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Perfect Parts

USA . 40,320 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,101 parts In-Stock

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Metaverse IC Inc.

Canada . 18,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 18,000 parts In-Stock

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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TANS Electronics

Latvia . 5,152 parts In-Stock

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SupplyDigital Components

Austria . 4,449 parts In-Stock

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Problanco Electronics

Mexico . 3,558 parts In-Stock

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Assy Fe

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Kulean Microsystems

USA . 1,705 parts In-Stock

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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Overview

Unleash the power of innovation with the MSB92WT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that amplifies performance in various applications. Crafted by the renowned manufacturer Onsemi, this PNP transistor offers unrivaled value and benefits to customers seeking reliability and efficiency. With a maximum power dissipation of 0.15W and a minimum DC current gain of 25, this transistor is designed for success. Whether you're amplifying signals or improving circuit performance, the MSB92WT1 is the ideal choice for your electronic projects. Experience excellence with Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic devices.

Maximum Collector-Emitter Voltage: 300 V

With a high maximum voltage rating, this transistor can handle higher voltage levels, making it versatile for various applications.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating enables the transistor to handle larger currents, enhancing its capability in power applications.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92WT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92WT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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