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MSB92ASWT1G

Onsemi

MSB92ASWT1G by Onsemi

MSB92ASWT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and transition frequency of 50MHz. This small outline package with gull wing terminals operates up to 150°C, making it suitable for various electronic designs.

Median Price

$0.094

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 980 parts In-Stock

1+ parts

$0.258

100+ parts

$0.097

1k+ parts

$0.063

10k+ parts

-

980

$0.258

$0.097

$0.063

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Mouser Electronics

USA . 9,816 parts In-Stock

1+ parts

$0.260

100+ parts

$0.100

1k+ parts

$0.073

10k+ parts

$0.060

9,816

$0.260

$0.100

$0.073

$0.060

DigiKey

USA . 566 parts In-Stock

1+ parts

$0.260

100+ parts

$0.099

1k+ parts

$0.064

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566

$0.260

$0.099

$0.064

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Flip Electronics (Authorized)

USA . 240,000 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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9,000

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Arrow

USA . 6,000 parts In-Stock

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$0.035

6,000

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$0.035

Farnell

UK . 3,430 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.052

10k+ parts

$0.043

3,430

-

-

$0.052

$0.043

Element14

Singapore . 3,430 parts In-Stock

1+ parts

-

100+ parts

$0.137

1k+ parts

$0.073

10k+ parts

$0.060

3,430

-

$0.137

$0.073

$0.060

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.035

3,000

-

-

-

$0.035

Rochester

USA . 769 parts In-Stock

1+ parts

-

100+ parts

$0.038

1k+ parts

$0.032

10k+ parts

$0.028

769

-

$0.038

$0.032

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,134 parts In-Stock

1+ parts

$0.029

100+ parts

-

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2,134

$0.029

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Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$0.056

100+ parts

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99

$0.056

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Flip Electronics

USA . 306,000 parts In-Stock

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306,000

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NAC Semi

USA . 51,000 parts In-Stock

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$0.042

51,000

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$0.042

Vyrian

USA . 32,421 parts In-Stock

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32,421

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IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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$0.043

15,000

-

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$0.043

Chip Stock

USA . 7,500 parts In-Stock

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7,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 34,845 parts In-Stock

1+ parts

$0.026

100+ parts

-

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34,845

$0.026

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Corphita

USA . 1,026 parts In-Stock

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$0.028

100+ parts

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1,026

$0.028

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Component Stockers USA

USA . 6,905 parts In-Stock

1+ parts

$0.030

100+ parts

$0.030

1k+ parts

$0.060

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6,905

$0.030

$0.030

$0.060

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Corohmni

South Africa . 283 parts In-Stock

1+ parts

$0.031

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283

$0.031

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Argo Parts USA

USA . 79 parts In-Stock

1+ parts

$0.056

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$0.055

79

$0.056

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-

$0.055

Continental Prestige Electronics

USA . 15,963 parts In-Stock

1+ parts

$0.187

100+ parts

$0.051

1k+ parts

$0.035

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15,963

$0.187

$0.051

$0.035

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Perfect Parts

USA . 123,898 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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Eastek

USA . 12,000 parts In-Stock

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$0.080

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12,000

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$0.080

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QUARKTWIN TECHNOLOGY LTD

USA . 7,987 parts In-Stock

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7,987

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Kulean Microsystems

USA . 7,258 parts In-Stock

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7,258

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TANS Electronics

Latvia . 6,984 parts In-Stock

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6,984

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A-Z Elektronik GmbH

Germany . 5,060 parts In-Stock

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5,060

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,532 parts In-Stock

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2,532

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Problanco Electronics

Mexico . 2,060 parts In-Stock

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2,060

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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962

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Lixinc

USA . 497 parts In-Stock

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497

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Overview

Unleash the power of quality and reliability with the MSB92ASWT1G Small Signal BJT by Onsemi. As a leading manufacturer in the industry, Onsemi offers top-notch products that guarantee superior performance and durability. Ideal for amplifier applications, this PNP transistor provides customers with unmatched value and benefits. With its small outline package and high transition frequency, the MSB92ASWT1G is perfect for a wide range of electronic projects where precision and efficiency are key. Trust Onsemi to deliver excellence with every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplification applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 300 V

Capable of handling high voltage applications, making it versatile for a wide range of electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a high maximum collector current, this transistor can handle higher current loads, suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency ensures fast switching speeds, making it suitable for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92ASWT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92ASWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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