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MSB92AWT1G

Onsemi

MSB92AWT1G by Onsemi

MSB92AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and transition frequency of 50MHz. This small outline package with gull wing terminals operates up to 150 °C, making it ideal for various electronic circuits.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 18,040 parts In-Stock

1+ parts

$0.057

100+ parts

$0.022

1k+ parts

$0.015

10k+ parts

$0.015

18,040

$0.057

$0.022

$0.015

$0.015

Mouser Electronics

USA . 8,684 parts In-Stock

1+ parts

$0.310

100+ parts

$0.121

1k+ parts

$0.079

10k+ parts

$0.055

8,684

$0.310

$0.121

$0.079

$0.055

DigiKey

USA . 2,095 parts In-Stock

1+ parts

$0.310

100+ parts

$0.120

1k+ parts

$0.078

10k+ parts

-

2,095

$0.310

$0.120

$0.078

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Verical

USA . 18,040 parts In-Stock

1+ parts

-

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$0.015

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$0.015

18,040

-

-

$0.015

$0.015

Avnet

USA . 15,000 parts In-Stock

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15,000

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Flip Electronics (Authorized)

USA . 2,650 parts In-Stock

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2,650

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Rochester

USA . 162 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

$0.041

10k+ parts

$0.037

162

-

$0.050

$0.041

$0.037

Chip1Stop

Japan . 9 parts In-Stock

1+ parts

-

100+ parts

$0.144

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9

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$0.144

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Distributors (In-Stock)

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Digiode

USA . 1,029 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,029

$0.039

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Vyrian

USA . 1,325 parts In-Stock

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$0.041

100+ parts

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1,325

$0.041

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Chip Stock

USA . 61,000 parts In-Stock

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61,000

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Zilex Electronics Inc.

Canada . 15,000 parts In-Stock

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15,000

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.052

15,000

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$0.052

NAC Semi

USA . 12,000 parts In-Stock

1+ parts

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$0.077

12,000

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$0.077

Flip Electronics

USA . 2,650 parts In-Stock

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2,650

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J2 Sourcing AB

Sweden . 1,700 parts In-Stock

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1,700

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Distributors (Availability)

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Corphita

USA . 1,854 parts In-Stock

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$0.037

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$0.037

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Corohmni

South Africa . 414 parts In-Stock

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$0.041

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414

$0.041

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Perfect Parts

USA . 65,436 parts In-Stock

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65,436

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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$0.060

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15,000

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$0.060

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Problanco Electronics

Mexico . 5,680 parts In-Stock

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5,680

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TANS Electronics

Latvia . 4,999 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Kulean Microsystems

USA . 1,207 parts In-Stock

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UHIMA Technologies

Türkiye . 587 parts In-Stock

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SupplyDigital Components

Austria . 408 parts In-Stock

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408

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Overview

Discover the MSB92AWT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in amplifier applications. With Onsemi's reputation for reliable manufacturing and cutting-edge technology, this PNP transistor delivers value and benefits to customers looking for a compact, efficient solution. The MSB92AWT1G's small outline package, dual terminal position, and maximum collector-emitter voltage of 300V make it ideal for a wide range of projects where precision and reliability are paramount. Upgrade your designs with the MSB92AWT1G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Allows for easy and efficient mounting onto PCBs, saving assembly time and space.

Maximum Power Dissipation (Abs): 0.15 W

Can handle power dissipation efficiently without overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 300 V

Suitable for applications requiring high voltage handling capabilities.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast signal switching, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92AWT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92AWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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