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MSB92ASWT1

Onsemi

MSB92ASWT1 by Onsemi

MSB92ASWT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and min DC current gain of 25. With a package style of small outline and surface mount capability, it operates at up to 150 °C.

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1k+

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Vyrian

USA . 11,968 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,157 parts In-Stock

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SupplyDigital Components

Austria . 7,936 parts In-Stock

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Kulean Microsystems

USA . 6,968 parts In-Stock

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Problanco Electronics

Mexico . 5,509 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,360 parts In-Stock

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Corphita

USA . 2,466 parts In-Stock

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TANS Electronics

Latvia . 2,163 parts In-Stock

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UHIMA Technologies

Türkiye . 548 parts In-Stock

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Corohmni

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Overview

Unlock the power of innovation with the MSB92ASWT1 by Onsemi. Designed with unparalleled quality and precision, this small signal bipolar junction transistor offers exceptional performance in amplifier applications. With a maximum collector-emitter voltage of 300V and a minimum DC current gain of 25, this PNP transistor provides reliability and efficiency like no other. Its surface mount design and gull wing terminal form make installation a breeze, while its compact package shape ensures seamless integration into any project. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good reliability and durability, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuit designs and compatibility with other components.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and layout, making the transistor easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal processing circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape offers a compact footprint, ideal for space-constrained designs and applications.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and secure connections, enhancing reliability in use.

No. of Terminals: 3

Three terminals offer simplified connectivity and ensure accurate placement during soldering and PCB assembly.

Maximum Power Dissipation (Abs): 0.15 W

This low power dissipation rating helps in reducing heat generation and improving overall efficiency.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, enabling compact and lightweight designs.

Minimum DC Current Gain (hFE): 25

A minimum current gain of 25 ensures consistent and reliable performance in various amplifier circuit applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the transistor to function reliably in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 300 V

High voltage rating provides versatility and compatibility with various voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability in small signal applications.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for handling of high current loads, making the transistor suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliable connections during PCB assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options, enhancing usability in various designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps in preventing damage to the transistor during soldering and assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures durability and reliability during the soldering process.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds and precise signal amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92ASWT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92ASWT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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