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MSB92AWT1

Onsemi

MSB92AWT1 by Onsemi

MSB92AWT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.15W, hFE of 120, and can operate at up to 150 °C. Ideal for surface mount designs due to its small outline package style and Gull Wing terminal form.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,098,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

1,098,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 278 parts In-Stock

1+ parts

$0.041

100+ parts

-

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278

$0.041

-

-

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DigiKey Marketplace

USA . 1,098,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.050

10k+ parts

-

1,098,000

-

-

$0.050

-

Bristol Electronics

USA . 56,789 parts In-Stock

1+ parts

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56,789

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 9,800 parts In-Stock

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9,800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,325 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,325

$0.039

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Corohmni

South Africa . 407 parts In-Stock

1+ parts

$0.039

100+ parts

-

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407

$0.039

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Continental Prestige Electronics

USA . 1,098,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.039

10k+ parts

-

1,098,000

-

-

$0.039

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Kepictronics

USA . 800,000 parts In-Stock

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800,000

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SupplyDigital Components

Austria . 7,561 parts In-Stock

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7,561

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TANS Electronics

Latvia . 4,398 parts In-Stock

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4,398

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Problanco Electronics

Mexico . 2,510 parts In-Stock

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2,510

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Kulean Microsystems

USA . 1,533 parts In-Stock

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1,533

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UHIMA Technologies

Türkiye . 67 parts In-Stock

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67

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Overview

Upgrade your electronics with the MSB92AWT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 0.15W and a minimum DC current gain of 120, this transistor offers exceptional value and efficiency. Its surface mount design and small outline package make it easy to integrate into your projects. Trust Onsemi and experience the benefits of the MSB92AWT1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good mechanical strength and thermal conductivity, making the transistor robust and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to integrate into electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount design allows for easy and compact PCB assembly, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape is standard and easy to handle, making it compatible with various packaging and mounting options.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.15 W

High maximum power dissipation rating allows the transistor to handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style is compact and space-saving, ideal for applications where size is a constraint.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for use in different environmental conditions.

Maximum Collector-Emitter Voltage: 300 V

High maximum collector-emitter voltage allows the transistor to handle high voltage signals in the circuit.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, providing good performance and reliability.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating ensures the transistor can handle high current loads in the circuit.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and reliability in PCB assembly processes.

Terminal Position: DUAL

Dual terminal position allows for easy and secure attachment to the PCB, enhancing the reliability of the connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures safe and reliable soldering of the transistor during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability ensures the transistor can withstand higher temperature soldering processes.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency indicates fast switching speed, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB92AWT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSB92AWT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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