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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STBV68 by STMicroelectronics

STBV68

STMicroelectronics

STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.

.6 A

400 V

SINGLE

3

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STL1525 by STMicroelectronics

2STL1525

STMicroelectronics

2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.

5 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

120 MHz

2STX2220 by STMicroelectronics

2STX2220

STMicroelectronics

2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

1.5 A

20 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

MMJT9410T1G by Onsemi

MMJT9410T1G

Onsemi

MMJT9410T1G by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain and low collector current. Suitable for surface mount designs requiring compact packaging and efficient heat dissipation.

COLLECTOR

.01 A

30 V

SINGLE

60

R-PDSO-G3

e3

3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

72 MHz

STX817A by STMicroelectronics

STX817A

STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

1.5 A

80 V

SINGLE

25

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

DZT3150-13 by Diodes Incorporated

DZT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

25 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DZT853-13 by Diodes Incorporated

DZT853-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;

COLLECTOR

6 A

100 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

2N4125TFR by Fairchild Semiconductor

2N4125TFR

Fairchild Semiconductor

2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2N5089TFR by Fairchild Semiconductor

2N5089TFR

Fairchild Semiconductor

2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

2N5089TF by Fairchild Semiconductor

2N5089TF

Fairchild Semiconductor

2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BC32725TAR by Fairchild Semiconductor

BC32725TAR

Fairchild Semiconductor

BC32725TAR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.8A. It has a min DC current gain of 100, making it suitable for switching applications up to 100MHz. The package style is cylindrical with a plastic/epoxy body material and matte tin terminal finish, featuring through-hole terminals in a round shape.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC547BTAR by Fairchild Semiconductor

BC547BTAR

Fairchild Semiconductor

BC547BTAR by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and max collector-emitter voltage of 45V. Ideal for switching applications, it offers a min DC current gain of 200 and operates at temperatures up to 150°C.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC547BTFR by Fairchild Semiconductor

BC547BTFR

Fairchild Semiconductor

Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC548CTAR by Fairchild Semiconductor

BC548CTAR

Fairchild Semiconductor

BC548CTAR by Fairchild Semiconductor is a NPN BJT transistor with hFE of 420. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications due to its max collector-emitter voltage of 30V and collector current of 0.1A.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CTFR by Fairchild Semiconductor

BC549CTFR

Fairchild Semiconductor

BC549CTFR by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A, ideal for switching applications. It has a min DC current gain of 420 and can handle up to 0.625W power dissipation. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

KSA992PBU by Fairchild Semiconductor

KSA992PBU

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

KSA992PTA by Fairchild Semiconductor

KSA992PTA

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

2PA1774R,135 by NXP Semiconductors

2PA1774R,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PB709AQW,115 by NXP Semiconductors

2PB709AQW,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;

.1 A

45 V

SINGLE

160

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

60 MHz

2PC4617R,135 by NXP Semiconductors

2PC4617R,135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PD601AQW,115 by NXP Semiconductors

2PD601AQW,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

.1 A

50 V

SINGLE

160

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

PMD4002K,115 by NXP Semiconductors

PMD4002K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified; Terminal Position: DUAL;

.6 A

40 V

SINGLE

50

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PMD4003K,115 by NXP Semiconductors

PMD4003K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: GULL WING; JESD-609 Code: e3;

1 A

40 V

SINGLE

75

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PMD5001K,115 by NXP Semiconductors

PMD5001K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Position: DUAL;

.1 A

40 V

SINGLE

24

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PMD5003K,115 by NXP Semiconductors

PMD5003K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

1 A

40 V

SINGLE

50

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

DZT491-13 by Diodes Incorporated

DZT491-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DCP69A-13 by Diodes Incorporated

DCP69A-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

DCP69A-16-13 by Diodes Incorporated

DCP69A-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

MMDT3946LP4-7 by Diodes Incorporated

MMDT3946LP4-7

Diodes Incorporated

NPN AND PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-N6

e4

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

300 MHz

70 ns

250 ns

DCP52-13 by Diodes Incorporated

DCP52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP52-16-13 by Diodes Incorporated

DCP52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-13 by Diodes Incorporated

DCP51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-16-13 by Diodes Incorporated

DCP51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-13 by Diodes Incorporated

DCP54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-16-13 by Diodes Incorporated

DCP54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-13 by Diodes Incorporated

DCP55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-16-13 by Diodes Incorporated

DCP55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-13 by Diodes Incorporated

DCP56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-16-13 by Diodes Incorporated

DCP56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

COLLECTOR

1 A

80 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

100 MHz

2DB1188P-13 by Diodes Incorporated

2DB1188P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

120 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1132Q-13 by Diodes Incorporated

2DB1132Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1386Q-13 by Diodes Incorporated

2DB1386Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

20 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

100 MHz

2DD1766P-13 by Diodes Incorporated

2DD1766P-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

82

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz