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2N5089TFR

Fairchild Semiconductor

2N5089TFR by Fairchild Semiconductor

2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.

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Overview

Unlock the potential of your electronic projects with the 2N5089TFR by Fairchild Semiconductor. This high-quality NPN transistor is perfect for amplifier applications, offering a reliable performance that you can trust. With a minimum DC current gain of 450 and a maximum collector-emitter voltage of 25V, this transistor provides exceptional value and efficiency. Whether you're a seasoned pro or just starting out in electronics, the 2N5089TFR is the perfect choice to take your projects to the next level. Experience the difference with Fairchild Semiconductor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor in many electronic applications, making it versatile and compatible.

Configuration: SINGLE

Simplified design for ease of use and straightforward application in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring reliable performance in amplifying signals.

Package Shape: ROUND

Space-efficient design that fits well in various electronic devices and circuit layouts.

No. of Terminals: 3

Standard number of terminals for a bipolar junction transistor, facilitating easy integration into circuits.

Maximum Power Dissipation (Abs): 0.35 W

Capable of handling moderate power levels, suitable for small signal applications.

Package Style (Meter): CYLINDRICAL

Compact and space-saving form factor that is ideal for small electronic devices.

Minimum DC Current Gain (hFE): 450

High DC current gain ensures efficient signal amplification and performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising functionality, suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 25 V

Can handle relatively high voltage levels, allowing for versatile use in different circuit configurations.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector current levels, suitable for small signal amplification.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish for stable connections.

Terminal Position: BOTTOM

Easy to mount and connect in circuit boards with the terminals positioned at the bottom.

Nominal Transition Frequency (fT): 50 MHz

Allows for high-frequency signal amplification and response, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5089TFR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

450

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5089TFR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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