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2N5087RLRA

Onsemi

2N5087RLRA by Onsemi

2N5087RLRA by Onsemi is a PNP BJT with max. collector-emitter voltage of 50V, hFE of 250, and max. power dissipation of 0.35W. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals. Operating temp up to 150°C makes it suitable for various electronic designs.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

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$0.040

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$0.040

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$0.040

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2,000

$0.040

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Chip Stock

USA . 34,000 parts In-Stock

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Bristol Electronics

USA . 7,325 parts In-Stock

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$0.094

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$0.056

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$0.037

7,325

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$0.037

Microfarads

USA . 6,445 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

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Digiode

USA . 2,473 parts In-Stock

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Resion

USA . 1,965 parts In-Stock

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Electronic Expediters

USA . 1,788 parts In-Stock

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1,788

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Prism Electronics

USA . 600 parts In-Stock

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600

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Vyrian

USA . 300 parts In-Stock

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300

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VNN

France . 111 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 106 parts In-Stock

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$0.458

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106

$0.458

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AZTECH Wire

Italy . 300 parts In-Stock

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$14.826

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$14.826

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Semicontronic

India . 1,617 parts In-Stock

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$31.050

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$30.274

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$30.118

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1,617

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Ampacity Inc.

Singapore . 513 parts In-Stock

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$49.050

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513

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TANS Electronics

Latvia . 8,008 parts In-Stock

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Kulean Microsystems

USA . 7,596 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 4,009 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 917 parts In-Stock

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Corphita

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Perfect Parts

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Bastille Electronics

Australia . 400 parts In-Stock

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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Corohmni

South Africa . 388 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the 2N5087RLRA by Onsemi! With its PNP polarity, single configuration, and amplifier application, this transistor is perfect for a wide range of electronic projects. Manufactured by Onsemi, you can trust in the superior quality and performance of this product. Whether you're a hobbyist or a professional, the 2N5087RLRA offers value, benefits, and advantages that will take your creations to the next level. Get yours today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and systems that require this type of transistor.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to handle in applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable and efficient performance.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminals make it easy to solder and connect the transistor to a circuit board.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit design and enables versatile connections.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-efficient design for easy installation.

Minimum DC Current Gain (hFE): 250

The high minimum DC current gain ensures consistent and stable amplification in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for use in circuits with higher voltages.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its electrical properties and reliability.

Maximum Collector Current (IC): 0.05 A

Capable of handling a maximum collector current of 0.05A, suitable for low to moderate current applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount and connect the transistor in a circuit.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235°C, the transistor can undergo reflow soldering processes without damage.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40MHz ensures fast switching and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5087RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5087RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-351-1939, 5961013511939

NIIN

013511939

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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