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2N5089TA

Fairchild Semiconductor

2N5089TA by Fairchild Semiconductor

2N5089TA by Fairchild Semiconductor is a NPN BJT transistor with a max power dissipation of 0.35W and min hFE of 450, ideal for amplifier applications. It has a max VCE of 25V, IC of 0.1A, and fT of 50MHz. The package is cylindrical with matte tin finish and through-hole terminals.

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Overview

Upgrade your electronic projects with the 2N5089TA by Fairchild Semiconductor, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. Manufactured by Fairchild Semiconductor, known for their reliability and innovation, this NPN transistor offers a minimum DC current gain of 450 and a maximum power dissipation of 0.35W, ensuring optimal performance. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 25V, this transistor is ideal for various electronic designs. Trust Fairchild Semiconductor to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used type in amplifier circuits, offering high efficiency and low noise performance.

Configuration: SINGLE

Simplified design for easy integration into circuits and applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes to provide high gain and low distortion.

Maximum Power Dissipation (Abs): 0.35 W

Can handle high power levels without overheating or damage.

Package Shape: ROUND

Compact and space-saving design for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy to solder and secure on a PCB for stable connections.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low voltage applications such as audio amplifiers and signal processing circuits.

Nominal Transition Frequency (fT): 50 MHz

Provides high-frequency response and fast switching speeds for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5089TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

450

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5089TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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