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2N5059

Texas Instruments

2N5059 by Texas Instruments

2N5059 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 1W, hFE of 30, and max. collector-emitter voltage of 250V. Ideal for switching applications due to its single configuration and cylindrical package style with wire terminals.

Median Price

$7.475

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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TEDSS.com

USA . 8 parts In-Stock

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$5.000

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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$9.950

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Vyrian

USA . 7,929 parts In-Stock

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PUI

USA . 5,070 parts In-Stock

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Digiode

USA . 3,235 parts In-Stock

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Electronic Expediters

USA . 1,979 parts In-Stock

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Anansix

USA . 1,237 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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Holdelec - ElecDif-Pro

France . 70 parts In-Stock

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Electro Mavin

USA . 22 parts In-Stock

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NAC Semi

USA . 6 parts In-Stock

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Electronics Depot

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Bristol Electronics

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Parana Technologies

USA . 1,926 parts In-Stock

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$1.185

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$1.989

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$1.185

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$1.989

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DigiPath Technology Company

USA . 140 parts In-Stock

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$1.305

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$1.201

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$1.305

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ChromeModa Solutions

Germany . 5,236 parts In-Stock

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$1.332

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$1.092

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$1.332

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IDEA Electronic Components Group

UK . 1,803 parts In-Stock

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$1.332

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$1.199

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AZTECH Wire

Italy . 865 parts In-Stock

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$8.038

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One Stop Electronics

USA . 413 parts In-Stock

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$50.050

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Component Stockers USA

USA . 222 parts In-Stock

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$99.990

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Corphita

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Glotronic Ltd.

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Northwest PG Solutions

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Supply Digital

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Native Components

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Assy Fe

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Overview

Unleash the power of innovation with the 2N5059 by Texas Instruments, a top-quality small signal bipolar junction transistor (BJT) designed for switching applications. Crafted with precision and durability in mind, this NPN transistor offers unmatched reliability and performance. Ideal for a wide range of electronic circuits, the 2N5059 is a valuable asset for engineers and hobbyists alike. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Upgrade your projects today with the 2N5059 and experience the difference.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides good heat dissipation, making this transistor suitable for high power applications where heat management is important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making this transistor easy to work with in various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in switching circuits.

Package Shape: ROUND

Round packaging allows for easy mounting and integration into circuit boards or other systems with round mounting holes.

Terminal Form: WIRE

Wire terminals make it easy to connect this transistor to other components or circuitry, simplifying installation and use.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and connection options, allowing for versatile applications.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle high-power applications without overheating or failing.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor, making this transistor suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures reliable amplification and signal processing in various circuit configurations.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperatures without losing performance or stability.

Maximum Collector-Emitter Voltage: 250 V

With a maximum collector-emitter voltage of 250 V, this transistor is suitable for high-voltage applications where reliability is crucial.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good reliability, making this transistor a solid choice for various applications.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, this transistor can handle moderate current loads in switching applications.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and solder this transistor onto PCBs or other mounting surfaces.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout by providing easy access to the collector terminal for connection.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30 MHz, this transistor offers fast response times and high-frequency performance in switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5059 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5059 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-179-7808, 5961001797808, 5961-14-347-5788, 5961143475788

NIIN

001797808, 143475788

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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