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2N5088T&A

Continental Device India

2N5088T&A by Continental Device India

2N5088T&A by Continental Device India is a NPN BJT transistor with hFE of 300, fT of 50 MHz, and IC of 0.1 A. It is used in amplifier circuits due to its max power dissipation of 0.35 W and operating temperature up to 150°C. The package style is cylindrical with matte tin terminal finish.

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Overview

Elevate your electronic projects with the 2N5088T&A by Continental Device India, a high-quality Small Signal Bipolar Junction Transistor designed for amplification applications. With a single NPN configuration and a minimum DC current gain of 300, this transistor delivers optimal performance and reliability. Its maximum power dissipation of 0.35 W and maximum operating temperature of 150°C ensure longevity and durability. Whether you're a hobbyist or a professional, this transistor's matte tin finish, cylindrical package style, and through-hole terminal form make it easy to integrate into your designs. Experience enhanced functionality and efficiency with the 2N5088T&A - a superior choice for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified single configuration makes it easy to integrate into circuits without complications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round shape allows for easy mounting and soldering in compact spaces or on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections for reliable circuit performance.

Maximum Power Dissipation (Abs): 0.35 W

Can handle up to 0.35W of power dissipation, suitable for low power applications.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures of up to 150°C, suitable for various industrial and electronic applications.

Maximum Collector-Emitter Voltage: 30 V

Can withstand up to 30V which is suitable for many amplifier circuits.

Transistor Element Material: SILICON

Silicon material provides reliable performance and stability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

Can handle collector current up to 0.1A, making it suitable for low to medium current amplifier applications.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and connection in circuits.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency of 50MHz allows for high-frequency signal amplification in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5088T&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5088T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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