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2N5088TA

Onsemi

2N5088TA by Onsemi

2N5088TA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 300, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 30V.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 59,864 parts In-Stock

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$0.020

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$0.020

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$0.020

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59,864

$0.020

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Digiode

USA . 3,254 parts In-Stock

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3,254

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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SPM Sales

USA . 1,050 parts In-Stock

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1,050

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Vyrian

USA . 486 parts In-Stock

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486

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Distributors (Availability)

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Component Stockers USA

USA . 1,701 parts In-Stock

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$0.030

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$0.030

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$0.030

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1,701

$0.030

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$0.030

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Ampacity Inc.

Singapore . 1,058 parts In-Stock

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$5.050

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1,058

$5.050

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AZTECH Wire

Italy . 486 parts In-Stock

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$11.954

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486

$11.954

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Perfect Parts

USA . 51,325 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,231 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 7,491 parts In-Stock

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Continental Prestige Electronics

USA . 5,812 parts In-Stock

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TANS Electronics

Latvia . 4,803 parts In-Stock

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Microchip USA

USA . 3,930 parts In-Stock

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Argo Parts USA

USA . 2,721 parts In-Stock

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Supply Digital

USA . 2,125 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

USA . 1,300 parts In-Stock

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SupplyDigital Components

Austria . 1,152 parts In-Stock

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Corphita

USA . 759 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2N5088TA Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers exceptional quality and reliability for a wide range of amplifier applications. With a minimum DC current gain of 300 and a maximum collector-emitter voltage of 30V, this transistor delivers superior performance and efficiency. Upgrade your electronics projects with the 2N5088TA and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Makes the product durable and resistant to damage.

Polarity or Channel Type

NPN - Ensures compatibility with a wide range of circuits and applications.

Configuration

SINGLE - Simplifies circuit design and installation processes.

Transistor Application

AMPLIFIER - Ideal for enhancing audio signals or other electronic signals.

Package Shape

ROUND - Provides a compact and space-saving design for easy integration.

Terminal Form

THROUGH-HOLE - Offers secure and reliable connections for stable performance.

No. of Terminals

3 - Simplifies the wiring process and reduces chances of errors.

Maximum Power Dissipation (Abs)

0.35 W - Ensures efficient power handling without overheating.

Package Style (Meter)

CYLINDRICAL - Allows for easy mounting and installation in various devices.

Minimum DC Current Gain (hFE)

300 - Ensures high amplification capabilities for improved signal quality.

Maximum Operating Temperature

150 °C - Allows for reliable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage

30 V - Provides a wide range of voltage handling capabilities for versatile use.

Transistor Element Material

SILICON - Offers excellent performance and reliability compared to other materials.

Maximum Collector Current (IC)

0.1 A - Supports high-current applications without compromising performance.

Terminal Finish

Tin (Sn) - Ensures corrosion resistance and long-term reliability.

Terminal Position

BOTTOM - Facilitates easy and secure PCB mounting for stable connections.

Nominal Transition Frequency (fT)

50 MHz - Enables fast signal processing and response times for efficient operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5088TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5088TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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