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2N5089TF

Fairchild Semiconductor

2N5089TF by Fairchild Semiconductor

2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.

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Overview

Enhance your electronic projects with the high-quality 2N5089TF from Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor ensures top-notch performance and reliability. This NPN transistor is perfect for amplifier applications, offering a minimum DC current gain of 450 and a maximum collector-emitter voltage of 25V. With a power dissipation of 0.35W and a transition frequency of 50 MHz, this transistor provides exceptional value and efficiency for your circuits. Upgrade your designs with the 2N5089TF and experience superior performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable option for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for amplification of signals with ease, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making this transistor easy to use for hobbyists and professionals alike.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor delivers high performance and efficiency in signal amplification.

Package Shape: ROUND

The round shape of the package allows for easy mounting and placement, making it convenient for circuit board layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide sturdy connections and easy soldering, ensuring a reliable electrical connection.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into a circuit without the need for complex wiring.

Maximum Power Dissipation (Abs): 0.35 W

This transistor can handle a maximum power dissipation of 0.35W, ensuring reliable operation under various load conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor, ideal for applications where space is limited.

Minimum DC Current Gain (hFE): 450

With a minimum DC current gain of 450, this transistor provides high amplification capability for a range of signal levels.

Maximum Operating Temperature: 150 °C

Operating at up to 150°C, this transistor can withstand high-temperature environments without sacrificing performance.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V ensures safe operation in various circuit configurations.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and compatibility with standard manufacturing processes.

Maximum Collector Current (IC): 0.1 A

This transistor can handle a maximum collector current of 0.1A, making it suitable for low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and improved solderability, ensuring long-term reliability in various environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies board layout and mounting, making this transistor easy to integrate into circuit designs.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor is ideal for high-frequency applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5089TF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

450

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5089TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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