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2N5087BU

Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

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Overview

Elevate your amplification projects with the 2N5087BU by Fairchild Semiconductor. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this PNP transistor boasts a high DC current gain of 250 and a maximum collector-emitter voltage of 50V. With a maximum power dissipation of 0.35W and a minimum transition frequency of 40MHz, this transistor is designed to deliver exceptional performance. Trust Fairchild Semiconductor for cutting-edge technology and superior products that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Makes the product lightweight and durable, ideal for portable applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits, simplifying design.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in small signal applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifying small signals with high accuracy.

Package Shape: ROUND

Compact shape saves space and allows for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and provides mechanical strength for reliable connections.

No. of Terminals: 3

Provides essential connections for biasing and signal input/output in a compact design.

Maximum Power Dissipation (Abs): 0.35 W

Offers a good balance of power handling capability for small signal applications.

Package Style (Meter): CYLINDRICAL

Streamlined design for easy installation and compatibility with standard sockets.

Minimum DC Current Gain (hFE): 250

Ensures reliable and consistent amplification of small signals.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 50 V

Provides flexibility for various voltage requirements in amplifier circuits.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels for small signal amplification.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for reliable connections and longevity.

Terminal Position: BOTTOM

Easy to mount on PCBs and ensures proper heat dissipation.

Nominal Transition Frequency (fT): 40 MHz

Allows for high-frequency applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5087BU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5087BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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