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2N5058

Texas Instruments

2N5058 by Texas Instruments

2N5058 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.15A, ideal for switching applications due to its single configuration and high transition frequency of 30MHz. With a package style of cylindrical metal body, it can dissipate up to 1W power at an operating temp. of 175°C efficiently.

Median Price

$6.610

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 894 parts In-Stock

1+ parts

$6.610

100+ parts

$4.720

1k+ parts

$3.750

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894

$6.610

$4.720

$3.750

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Distributors (In-Stock)

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Bristol Electronics

USA . 12,161 parts In-Stock

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$5.376

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$2.509

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$2.204

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$5.376

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$2.204

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Digiode

USA . 2,089 parts In-Stock

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$6.280

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2,089

$6.280

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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$26.860

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9

$26.860

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ES Components

USA . 37,418 parts In-Stock

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PUI

USA . 3,917 parts In-Stock

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Electronic Expediters

USA . 3,613 parts In-Stock

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Anansix

USA . 2,427 parts In-Stock

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Vyrian

USA . 2,215 parts In-Stock

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DF Sales Co.

USA . 43 parts In-Stock

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DF Sales Co.

USA . 43 parts In-Stock

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PC Components Company LLC

USA . 25 parts In-Stock

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25

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Manoshevitz Elec. Sales

Israel . 24 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 13 parts In-Stock

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Resion

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LittleDiode

UK . 7 parts In-Stock

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Microfarads

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Distributors (Availability)

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Parana Technologies

USA . 2,004 parts In-Stock

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$0.878

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-

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$1.819

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2,004

$0.878

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$1.819

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DigiPath Technology Company

USA . 1,793 parts In-Stock

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$0.967

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$0.890

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1,793

$0.967

$0.890

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ChromeModa Solutions

Germany . 1,789 parts In-Stock

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$0.987

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$0.809

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1,789

$0.987

$0.809

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IDEA Electronic Components Group

UK . 351 parts In-Stock

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$0.987

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$0.888

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351

$0.987

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$0.888

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Corphita

USA . 3,765 parts In-Stock

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$5.949

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Native Components

USA . 754 parts In-Stock

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$6.545

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$6.545

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Northwest PG Solutions

USA . 998 parts In-Stock

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$6.414

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Supply Digital

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Assy Fe

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RTC Component Inc.

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Overview

Upgrade your electronic projects with the high-quality 2N5058 from Texas Instruments, a leading manufacturer in the industry. As part of the Small Signal Bipolar Junction Transistor category, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 1 W and a maximum collector-emitter voltage of 300 V, this transistor offers reliability and efficiency. Whether you're a hobbyist or a professional, the 2N5058 provides the performance and value you need for your projects. Experience the benefits of Texas Instruments' expertise and innovation with this versatile and dependable component.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation and durability, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance characteristics.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

Round shape allows for easy integration and mounting in various circuit layouts.

Terminal Form: WIRE

Wire terminals provide easy connections and flexibility in circuit assembly.

No. of Terminals: 3

Three terminals enable efficient control and operation of the transistor in a circuit.

Maximum Power Dissipation (Abs): 1 W

With a power dissipation of 1 W, this transistor can handle moderate power levels effectively.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers space-saving and compact design options for applications.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and reliable amplification performance.

Maximum Operating Temperature: 175 °C

Operates effectively at up to 175°C, suitable for a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 300 V

High maximum voltage rating of 300 V allows for use in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability in semiconductor devices like transistors.

Maximum Collector Current (IC): 0.15 A

Can handle a maximum collector current of 0.15 A, suitable for low to moderate current applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering of the transistor.

Case Connection: COLLECTOR

Case connection to collector enables efficient heat dissipation and ensures proper circuit operation.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30 MHz, this transistor offers good high-frequency performance in switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5058 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5058 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-417-8090, 5961004178090, 5961-00-581-7723, 5961005817723

NIIN

004178090, 005817723

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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