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2N5086

Texas Instruments

2N5086 by Texas Instruments

2N5086 by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 150, and max. collector-emitter voltage of 50V. It is used in amplifier applications due to its high transition frequency of 40MHz and max. operating temperature of 150°C.

Median Price

$5.100

Lifecycle Status

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1k+

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Master Electronics

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Component Electronics Inc.

Canada . 375 parts In-Stock

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American Microsemiconductor Inc.

USA . 7,797 parts In-Stock

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$2.750

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Ace Electronics

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Forefront Electronics and Design

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Bristol Electronics

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ComSIT Distribution GmbH

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MISTER SPROCKETS

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Lakeview Electronics

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Odyssey Electronics LTD

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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ACDS - Activité Composants Distribution Service

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LittleDiode

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Fibra_Brandt Electronic GMBH

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Electronics Depot

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Corohmni

South Africa . 482 parts In-Stock

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$0.190

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482

$0.190

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Parana Technologies

USA . 431 parts In-Stock

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$0.666

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$1.717

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431

$0.666

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DigiPath Technology Company

USA . 1,048 parts In-Stock

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$0.733

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$0.674

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$0.733

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IDEA Electronic Components Group

UK . 833 parts In-Stock

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$0.748

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$0.673

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833

$0.748

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ChromeModa Solutions

Germany . 187 parts In-Stock

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$0.748

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$0.613

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.897

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$1.878

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$1.802

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Metaverse IC Inc.

Canada . 12,290 parts In-Stock

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LOOK Integrated Logistics

Peru . 8,010 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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NIA Electronics

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Northwest PG Solutions

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SupplyDigital Components

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Problanco Electronics

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Montano Global Distributors

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Corphita

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Ledger Components

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QUARKTWIN TECHNOLOGY LTD

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LMD Electronica

Estonia . 1,305 parts In-Stock

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UHIMA Technologies

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Overview

Elevate your amplifier projects with the high-quality 2N5086 by Texas Instruments, a top-tier manufacturer known for reliability and innovation. As a PNP small signal bipolar junction transistor, this product offers superior performance in amplification applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 150, the 2N5086 ensures optimal power dissipation and efficiency. Upgrade your electronic designs with this premium component and enjoy seamless operation and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified design with single transistor configuration for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, delivering optimized performance in amplification circuits.

Maximum Power Dissipation (Abs): 0.35 W

Can handle up to 0.35 watts of power dissipation, suitable for moderate power applications.

Package Shape: ROUND

Compact round shape for easy integration into circuit layouts.

Terminal Form: WIRE

Wire terminals for convenient and secure connections in circuits.

No. of Terminals: 3

Simple 3-terminal configuration for easy circuit interfacing.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50 volts, suitable for various voltage applications.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency for fast switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5086 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5086 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-728-5363, 5961007285363

NIIN

007285363

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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