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2N5087G

Onsemi

2N5087G by Onsemi

2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.

Median Price

$5.039

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Nova Conductors

Japan . 500 parts In-Stock

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$0.078

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TEDSS.com

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Vyrian

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Chip Stock

USA . 5,600 parts In-Stock

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PUI

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VNN

France . 718 parts In-Stock

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Inventory MP

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Bristol Electronics

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Digiode

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Ashlea Components Ltd

UK . 100 parts In-Stock

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Sensible Micro Corp

USA . 25 parts In-Stock

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EMSNET

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Corohmni

South Africa . 288 parts In-Stock

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$0.076

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Bastille Electronics

Australia . 100 parts In-Stock

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$0.078

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$0.074

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$0.070

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$0.069

100

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$0.074

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$0.069

Argo Parts USA

USA . 4,403 parts In-Stock

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Continental Prestige Electronics

USA . 1,293 parts In-Stock

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Aztec Data Supply Inc.

USA . 86 parts In-Stock

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$0.490

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Ampacity Inc.

Singapore . 630 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 854 parts In-Stock

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Perfect Parts

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Lixinc

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

Latvia . 5,754 parts In-Stock

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Kepictronics

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Corphita

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UHIMA Technologies

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ChipstoGo Electronic ltd

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Overview

Unlock the potential of your electronic projects with the 2N5087G by Onsemi. Crafted with precision and expertise, this high-quality Small Signal Bipolar Junction Transistor offers unparalleled performance as an amplifier in various applications. With a maximum power dissipation of 1.5W and a minimum DC current gain of 250, this PNP transistor delivers exceptional reliability and efficiency. Trust Onsemi's reputation for excellence and enhance your circuits with the 2N5087G's superior quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package makes this transistor lightweight and durable, ideal for applications where weight and reliability are important factors.

Polarity or Channel Type: PNP

The PNP polarity makes this transistor suitable for applications where positive voltage capabilities are needed, providing versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to integrate into various electronic devices and systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers excellent performance in amplifying signals accurately and efficiently.

Package Shape: ROUND

The round package shape allows for easy installation and placement within a circuit, optimizing space and reducing the need for additional components.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process and ensures a secure connection, making this transistor user-friendly for assembly.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options, allowing for flexibility in circuit design and customization.

Maximum Power Dissipation (Abs): 1.5 W

The high power dissipation capability of 1.5W ensures reliable performance even under demanding operating conditions, making this transistor a robust choice for power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, making this transistor suitable for applications where size constraints are a concern.

Minimum DC Current Gain (hFE): 250

With a minimum DC current gain of 250, this transistor offers efficient signal amplification and reliable performance in a variety of circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance in high-temperature environments, making this transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50V allows for reliable operation in voltage-sensitive circuits, making this transistor a versatile choice for various applications.

Transistor Element Material: SILICON

The use of silicon material in the transistor element provides excellent performance characteristics, including high conductivity and durability, ensuring long-term reliability.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current loads, making it suitable for a wide range of circuit designs.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish provides excellent corrosion resistance and ensures reliable electrical connections, making this transistor suitable for long-term use.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and PCB layout, providing ease of use and enhancing the overall efficiency of the circuit design.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for easy and reliable soldering during assembly, ensuring a strong and durable connection for the transistor.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40MHz, this transistor offers high-speed switching characteristics and efficient signal processing capabilities, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5087G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5087G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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