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2N5088G

Onsemi

2N5088G by Onsemi

2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 82,125 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

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$0.040

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82,125

$0.040

$0.040

$0.040

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Verical

USA . 38,562 parts In-Stock

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$0.184

38,562

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$0.184

Distributors (In-Stock)

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Digiode

USA . 1,893 parts In-Stock

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$0.032

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1,893

$0.032

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Nova Conductors

Japan . 10 parts In-Stock

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$0.170

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10

$0.170

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Vyrian

USA . 9,213 parts In-Stock

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9,213

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Inventory MP

USA . 782 parts In-Stock

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782

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Bristol Electronics

USA . 782 parts In-Stock

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VNN

France . 782 parts In-Stock

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782

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Distributors (Availability)

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Ampacity Inc.

Singapore . 18,908 parts In-Stock

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$0.029

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18,908

$0.029

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Corphita

USA . 794 parts In-Stock

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$0.031

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794

$0.031

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Corohmni

South Africa . 182 parts In-Stock

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$0.034

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$0.034

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Continental Prestige Electronics

USA . 5,418 parts In-Stock

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$0.170

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$0.167

5,418

$0.170

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$0.167

Argo Parts USA

USA . 4,765 parts In-Stock

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$0.170

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$0.165

4,765

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$0.165

Netroflash

USA . 1,000 parts In-Stock

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$0.170

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$0.167

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1,000

$0.170

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Aztec Data Supply Inc.

USA . 3,025 parts In-Stock

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$0.753

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$0.753

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AZTECH Wire

Italy . 674 parts In-Stock

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$15.170

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674

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Perfect Parts

USA . 38,325 parts In-Stock

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Kepictronics

USA . 9,197 parts In-Stock

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Kulean Microsystems

USA . 6,336 parts In-Stock

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TANS Electronics

Latvia . 4,283 parts In-Stock

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Problanco Electronics

Mexico . 2,829 parts In-Stock

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SupplyDigital Components

Austria . 2,166 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 105 parts In-Stock

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Overview

Enhance your electronic projects with the Onsemi 2N5088G Small Signal Bipolar Junction Transistor (BJT). Manufactured by Onsemi, known for their high-quality components, this NPN transistor offers superior performance in amplifier applications. With a minimum DC current gain of 350 and a maximum collector-emitter voltage of 30V, this transistor ensures reliable operation and efficient power dissipation up to 0.35W. Whether you're a hobbyist or a professional, the 2N5088G provides exceptional value and benefits, making it an essential component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various amplifier configurations.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

Compact and space-saving design, making it suitable for applications where size and form factor are important.

Terminal Form: THROUGH-HOLE

Easy to solder and integrate into through-hole PCBs, providing a reliable connection in electronic circuits.

Terminal Finish: TIN SILVER COPPER

Provides good contact reliability and conductivity, ensuring stable performance in various operating conditions.

Maximum Power Dissipation (Abs): 0.35 W

Capable of handling power dissipation effectively, making it suitable for amplifier applications where heat dissipation is important.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables the transistor to operate effectively in high-frequency amplifier circuits, ensuring accurate signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5088G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5088G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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