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2N5089G

Onsemi

2N5089G by Onsemi

2N5089G by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.05A in a cylindrical package style.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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TEDSS.com

USA . 2,500 parts In-Stock

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PUI

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Vyrian

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VNN

France . 1,628 parts In-Stock

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Digiode

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Tech-Mark Corp

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Sensible Micro Corp

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Nova Conductors

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Corohmni

South Africa . 281 parts In-Stock

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AZTECH Wire

Italy . 517 parts In-Stock

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$8.988

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Ampacity Inc.

Singapore . 1,363 parts In-Stock

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$49.050

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Component Stockers USA

USA . 501 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Authorized Procurement Solutions

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Lixinc

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A-Z Elektronik GmbH

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Glotronic Ltd.

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Problanco Electronics

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UHIMA Technologies

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Bastille Electronics

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Overview

Elevate your electronic projects with the high-quality 2N5089G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability. This NPN transistor is perfect for amplifier applications, offering a DC current gain of 450 and a maximum power dissipation of 1.5W. With its compact cylindrical package and superior silicon element material, the 2N5089G delivers excellent functionality and efficiency. Upgrade your projects today with the unmatched value and benefits of Onsemi's 2N5089G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a versatile choice for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to manage and integrate into circuit designs, making this transistor user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for audio and signal amplification needs.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, enhancing the usability of this transistor in various projects.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are suitable for hand soldering, making this transistor easy to work with.

No. of Terminals: 3

With three terminals, this transistor can perform a range of functions and can be easily integrated into different circuit configurations.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation allows this transistor to handle higher power levels without overheating, ensuring reliability in operation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor and efficient heat dissipation, making this transistor suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 450

With a minimum DC current gain of 450, this transistor provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance ensures that this transistor can operate reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage rating allows this transistor to handle higher voltage levels without breakdown, improving overall circuit stability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable and efficient choice for amplifier applications.

Maximum Collector Current (IC): 0.05 A

The high maximum collector current rating ensures that this transistor can handle higher current loads, making it suitable for a variety of amplification needs.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance, ensuring stable connections and reliable performance.

Terminal Position: BOTTOM

The terminal position at the bottom facilitates easy mounting and soldering, improving the overall usability of this transistor.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring robustness during assembly.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency indicates that this transistor can switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5089G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

450

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5089G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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