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STX817A

STMicroelectronics

STX817A by STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Zilex Electronics Inc.

Canada . 2,500 parts In-Stock

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2,500

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R&J Components

USA . 2,295 parts In-Stock

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2,295

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Vyrian

USA . 2,201 parts In-Stock

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2,201

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Anansix

USA . 806 parts In-Stock

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806

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Digiode

USA . 351 parts In-Stock

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351

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 799 parts In-Stock

1+ parts

$1.579

100+ parts

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$1.421

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799

$1.579

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$1.421

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MKK Technologies

India . 65 parts In-Stock

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$2.969

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65

$2.969

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DigiPath Technology Company

USA . 65 parts In-Stock

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$2.969

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65

$2.969

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AZTECH Wire

Italy . 52 parts In-Stock

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$14.640

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$14.640

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QUARKTWIN TECHNOLOGY LTD

USA . 23,539 parts In-Stock

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23,539

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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5,880

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Corphita

USA . 3,158 parts In-Stock

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3,158

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Parana Technologies

USA . 1,381 parts In-Stock

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$1.888

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$1.888

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Alle Elektronik GmbH

Germany . 1,228 parts In-Stock

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Overview

Experience reliability and efficiency with the STX817A PNP transistor from STMicroelectronics, a trusted leader in semiconductor innovation. This small signal BJT is designed for seamless switching applications, offering exceptional performance across diverse environments. With its robust construction and high maximum operating temperature, the STX817A ensures longevity and stability, empowering your designs with confidence and precision. Upgrade your projects today and enjoy the benefits of superior quality and dependability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it allows for easy integration in various circuits, especially in switching and amplification applications.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, making it ideal for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, it offers fast response times, making it ideal for digital circuits and relay driving.

Package Shape: ROUND

The round package shape can offer better thermal performance and space efficiency in certain assembly configurations.

Terminal Form: WIRE

Wire terminals provide flexibility in mounting and connecting, accommodating various circuit designs and layouts.

No. of Terminals: 3

Having three terminals is typical for BJTs, facilitating common circuit configurations such as common emitter, collector, or base.

Maximum Power Dissipation (Abs): 0.9 W

0.9 W power dissipation allows the transistor to handle substantial power levels, ensuring reliability in demanding applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides efficient use of space and can be easily integrated into various PCB layouts.

Minimum DC Current Gain (hFE): 25

A minimum gain of 25 ensures adequate amplification, making this product suitable for many general-purpose applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can perform reliably in extreme conditions, enhancing its versatility.

Maximum Collector-Emitter Voltage: 80 V

An 80 V maximum voltage rating allows this transistor to be used in a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material provides excellent conductivity and thermal stability, ensuring consistent performance.

Maximum Collector Current (IC): 1.5 A

A collector current capability of 1.5 A allows for significant load driving, making it suitable for various power applications.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate better thermal management and reduce inductance in circuit applications.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz enables the transistor to function effectively in high-speed switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX817A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STX817A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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