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STX817A-AP

STMicroelectronics

STX817A-AP by STMicroelectronics

STX817A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits requiring efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,827 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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4,827

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Lakeland Logistics Inc

USA . 4,000 parts In-Stock

1+ parts

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1k+ parts

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4,000

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-

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Bristol Electronics

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Digiode

USA . 2,484 parts In-Stock

1+ parts

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2,484

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Anansix

USA . 1,502 parts In-Stock

1+ parts

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1,502

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,308 parts In-Stock

1+ parts

$0.567

100+ parts

-

1k+ parts

$0.510

10k+ parts

-

2,308

$0.567

-

$0.510

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MKK Technologies

India . 482 parts In-Stock

1+ parts

$1.066

100+ parts

-

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482

$1.066

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DigiPath Technology Company

USA . 482 parts In-Stock

1+ parts

$1.066

100+ parts

-

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482

$1.066

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Corphita

USA . 4,009 parts In-Stock

1+ parts

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4,009

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Parana Technologies

USA . 1,504 parts In-Stock

1+ parts

-

100+ parts

$0.678

1k+ parts

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10k+ parts

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1,504

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$0.678

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Overview

Elevate your electronic projects with the STX817A-AP by STMicroelectronics, a reliable PNP small signal transistor designed for optimal switching performance. Known for its exceptional quality and innovation in semiconductor solutions, STMicroelectronics ensures this component delivers unmatched durability and efficiency in various applications, from consumer electronics to industrial systems. Experience superior power management and reliability, empowering your designs with confidence. Choose STX817A-AP for excellence that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers good durability and reliability in various environments, making this BJT suitable for a range of applications.

Polarity or Channel Type: PNP

Being a PNP transistor, it is ideal for sinking current and is commonly used in complementary push-pull amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate into various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can efficiently control large currents, making it suitable for power management circuits.

Package Shape: ROUND

The round package shape allows for easy handling and integration into tight spaces in printed circuit boards (PCBs).

Terminal Form: WIRE

Wire terminal form provides flexible connection options, enhancing the versatility of the transistor in different circuit designs.

No. of Terminals: 3

With three terminals, this BJT is easy to incorporate into standard circuit configurations, ensuring compatibility with existing designs.

Maximum Power Dissipation: 0.9 W

A maximum power dissipation of 0.9 W allows for moderate control of power, making it suitable for a variety of electronic applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style contributes to efficient use of space on PCBs and aids in thermal management.

Minimum DC Current Gain (hFE): 25

A minimum dc current gain of 25 ensures adequate amplification for many switching applications, enhancing performance.

Maximum Operating Temperature: 150 °C

Capable of operating at higher temperatures, this BJT can be used in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 80 V

An 80 V collector-emitter voltage rating allows the transistor to handle a wide range of voltages, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon as the element material provides good overall performance, low leakage currents, and efficiency in switching applications.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A enables the transistor to drive significant loads, ideal for power switch applications.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easy mounting on PCBs, providing a stable and effective connection.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz allows for higher frequency operation, making this BJT suitable for signal amplification in RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX817A-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STX817A-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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