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STMicroelectronics Small Signal Bipolar Junction Transistors (BJT) 33

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STL73D-AP by STMicroelectronics

STL73D-AP

STMicroelectronics

STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.

1.5 A

400 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

3STL2540 by STMicroelectronics

3STL2540

STMicroelectronics

3STL2540 by STMicroelectronics is a PNP BJT with 1.2W power dissipation, hFE of 100, and IC of 5A. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150 °C.

5 A

SINGLE

100

1

150 Cel

NOT SPECIFIED

PNP

1.2 W

Other Transistors

YES

NOT SPECIFIED

2N2907AUB1 by STMicroelectronics

2N2907AUB1

STMicroelectronics

2N2907AUB1 by STMicroelectronics is a PNP BJT transistor for switching applications. With hFE of 50, Vce of 60V, and Ic of 0.5A, it offers fast ton of 45ns and toff of 300ns. This SMD transistor in small outline package is ideal for compact electronic designs.

.5 A

60 V

SINGLE

50

R-XDSO-N3

e4

1

3

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

PNP

YES

Gold (Au)

NO LEAD

DUAL

SWITCHING

SILICON

300 ns

45 ns

SO642 by STMicroelectronics

SO642

STMicroelectronics

SO642 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

.1 A

300 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.31 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

SO692 by STMicroelectronics

SO692

STMicroelectronics

SO692 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

.1 A

300 V

SINGLE

25

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

STBV42-AP by STMicroelectronics

STBV42-AP

STMicroelectronics

STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G-AP by STMicroelectronics

STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G by STMicroelectronics

STBV42G

STMicroelectronics

STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13003G by STMicroelectronics

STX13003G

STMicroelectronics

STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

STBV42 by STMicroelectronics

STBV42

STMicroelectronics

STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV45 by STMicroelectronics

STBV45

STMicroelectronics

STBV45 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.75A. It has a min. DC current gain of 5, suitable for switching applications with max. power dissipation of 0.95W in cylindrical package shape.

.75 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.95 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV68 by STMicroelectronics

STBV68

STMicroelectronics

STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.

.6 A

400 V

SINGLE

3

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STL1525 by STMicroelectronics

2STL1525

STMicroelectronics

2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.

5 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

120 MHz

2STX2220 by STMicroelectronics

2STX2220

STMicroelectronics

2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

1.5 A

20 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX817A by STMicroelectronics

STX817A

STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

1.5 A

80 V

SINGLE

25

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

STX13003 by STMicroelectronics

STX13003

STMicroelectronics

STX13003 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1.5W and max. collector current of 1A, suitable for circuits requiring high voltage and current handling capabilities in a cylindrical package style.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

STX715 by STMicroelectronics

STX715

STMicroelectronics

STX715 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Ideal for efficient circuit designs with its cylindrical package and through-hole terminals.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA42 by STMicroelectronics

STPSA42

STMicroelectronics

STPSA42 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92 by STMicroelectronics

STPSA92

STMicroelectronics

STPSA92 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STX83003 by STMicroelectronics

STX83003

STMicroelectronics

STX83003 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Its cylindrical plastic package ensures reliable performance in various circuits.

1 A

400 V

SINGLE

4

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STPSA42-AP by STMicroelectronics

STPSA42-AP

STMicroelectronics

STPSA42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92-AP by STMicroelectronics

STPSA92-AP

STMicroelectronics

STPSA92-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300 V, power dissipation of 0.625 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in compact designs.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STX13005 by STMicroelectronics

STX13005

STMicroelectronics

STX13005 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX690A by STMicroelectronics

STX690A

STMicroelectronics

STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STL72 by STMicroelectronics

STL72

STMicroelectronics

STL72 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STX1360 by STMicroelectronics

2STX1360

STMicroelectronics

2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

785 ns

120 ns

STX790A-AP by STMicroelectronics

STX790A-AP

STMicroelectronics

STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STBV42D by STMicroelectronics

STBV42D

STMicroelectronics

STBV42D by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

STX13004 by STMicroelectronics

STX13004

STMicroelectronics

STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.

2 A

400 V

SINGLE

6

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

STX826 by STMicroelectronics

STX826

STMicroelectronics

STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

2STR1230 by STMicroelectronics

2STR1230

STMicroelectronics

2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.

1.5 A

30 V

SINGLE

80

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STX715-AP by STMicroelectronics

STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz