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STBV45

STMicroelectronics

STBV45 by STMicroelectronics

STBV45 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.75A. It has a min. DC current gain of 5, suitable for switching applications with max. power dissipation of 0.95W in cylindrical package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 5,763 parts In-Stock

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Vyrian

USA . 5,633 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,500 parts In-Stock

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2,500

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Anansix

USA . 1,652 parts In-Stock

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Digiode

USA . 306 parts In-Stock

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306

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LittleDiode

UK . 5 parts In-Stock

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5

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IDEA Electronic Components Group

UK . 557 parts In-Stock

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$1.839

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$1.655

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557

$1.839

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$1.655

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MKK Technologies

India . 1,957 parts In-Stock

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$3.458

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1,957

$3.458

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DigiPath Technology Company

USA . 1,957 parts In-Stock

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$3.458

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$3.458

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AZTECH Wire

Italy . 1,097 parts In-Stock

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$15.950

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$15.950

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Ampacity Inc.

Singapore . 1,358 parts In-Stock

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$26.050

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$26.050

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Corphita

USA . 3,591 parts In-Stock

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3,591

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Alle Elektronik GmbH

Germany . 3,028 parts In-Stock

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Parana Technologies

USA . 2,267 parts In-Stock

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$2.199

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Overview

Discover the power and versatility of the STBV45 by STMicroelectronics, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With its NPN polarity and single configuration, this transistor offers maximum power dissipation of 0.95W and a maximum collector-emitter voltage of 400V. Trust in STMicroelectronics' reputation for excellence in semiconductor manufacturing as you explore the endless possibilities of the STBV45 in your next project. Unlock new potential and efficiency with this high-performance transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, offering versatility and reliability.

Configuration: SINGLE

Single configuration makes it easier to integrate into circuits and simplifies the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Package Shape: ROUND

Round shape allows for easy mounting and handling, ideal for compact circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, suitable for applications where reliability is crucial.

Maximum Power Dissipation (Abs): 0.95 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy and secure mounting options, adding to the convenience of use.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain of 5 ensures stable and predictable amplification characteristics in various circuit applications.

Maximum Operating Temperature: 150 °C

High operating temperature range of up to 150 °C allows for reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high breakdown voltage, enhancing the overall performance of the transistor.

Maximum Collector Current (IC): 0.75 A

With a maximum collector current of 0.75 A, this transistor can handle moderate current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in various operating conditions.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure solder connections, adding to the overall durability of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STBV45 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV45 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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