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STBV42D

STMicroelectronics

STBV42D by STMicroelectronics

STBV42D by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,147 parts In-Stock

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10,147

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Digiode

USA . 2,904 parts In-Stock

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2,904

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Anansix

USA . 2,252 parts In-Stock

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2,252

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 945 parts In-Stock

1+ parts

$1.487

100+ parts

-

1k+ parts

$1.338

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945

$1.487

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$1.338

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MKK Technologies

India . 1,521 parts In-Stock

1+ parts

$2.796

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1,521

$2.796

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DigiPath Technology Company

USA . 1,521 parts In-Stock

1+ parts

$2.796

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1,521

$2.796

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AZTECH Wire

Italy . 865 parts In-Stock

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$10.420

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865

$10.420

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Alle Elektronik GmbH

Germany . 3,217 parts In-Stock

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3,217

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Corphita

USA . 2,467 parts In-Stock

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2,467

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Perfect Parts

USA . 956 parts In-Stock

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956

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Parana Technologies

USA . 234 parts In-Stock

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$1.778

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234

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$1.778

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Overview

Unlock exceptional performance with the STBV42D from STMicroelectronics—a leader in innovative semiconductor solutions. This NPN small signal transistor combines reliability and efficiency, boasting robust switching capabilities for diverse applications, from automotive to consumer electronics. With superior quality and a commitment to excellence, STMicroelectronics ensures you get unmatched value and longevity, elevating your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight and durable package, ensuring reliability and ease of integration into various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this device allows for efficient current amplification, making it suitable for a wide range of electronic circuits, particularly in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The single configuration with a built-in diode offers additional circuit protection and simplifies design, making it an efficient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures low on-state voltage drop, resulting in improved energy efficiency in circuits.

Package Shape: ROUND

The round package shape allows for efficient cooling and easy mounting in various applications, enhancing the performance and longevity of the device.

Terminal Form: WIRE

Wire terminal form provides flexibility in circuit design and simplifies the assembly process, making it suitable for different configurations.

No. of Terminals: 3

The three-terminal layout is standard for BJTs, ensuring compatibility with a wide range of circuits and making it easier to integrate into existing designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enhances thermal dissipation, which is critical for maintaining performance in high-temperature applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 allows for efficient signal amplification, making it effective in low-power applications where signal integrity is crucial.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function effectively in high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400V ensures that this transistor can handle significant voltage levels, making it suitable for a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon as the transistor element material ensures high reliability and stability, making it a preferred choice for most electronic devices.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate power levels, ideal for switching applications in consumer electronics.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and corrosion resistance, ensuring a reliable connection in various operational environments.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient PCB layout and improves thermal management, which is essential for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STBV42D attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV42D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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