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STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

Median Price

$0.962

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.962

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-

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72

$0.962

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Vyrian

USA . 8,429 parts In-Stock

1+ parts

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8,429

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Digiode

USA . 3,569 parts In-Stock

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3,569

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Anansix

USA . 548 parts In-Stock

1+ parts

-

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548

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,116 parts In-Stock

1+ parts

$1.202

100+ parts

-

1k+ parts

$1.081

10k+ parts

-

1,116

$1.202

-

$1.081

-

MKK Technologies

India . 702 parts In-Stock

1+ parts

$2.259

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-

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702

$2.259

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DigiPath Technology Company

USA . 702 parts In-Stock

1+ parts

$2.259

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702

$2.259

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Ampacity Inc.

Singapore . 958 parts In-Stock

1+ parts

$16.050

100+ parts

-

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958

$16.050

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AZTECH Wire

Italy . 201 parts In-Stock

1+ parts

$19.860

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201

$19.860

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Component Stockers USA

USA . 470 parts In-Stock

1+ parts

$99.990

100+ parts

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470

$99.990

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 4,374 parts In-Stock

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4,374

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Perfect Parts

USA . 4,176 parts In-Stock

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4,176

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Corphita

USA . 1,898 parts In-Stock

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1,898

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Parana Technologies

USA . 1,073 parts In-Stock

1+ parts

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100+ parts

$1.437

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1,073

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$1.437

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Overview

Unlock the power of reliable performance with the STBV42G-AP NPN transistor from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for efficient switching applications, this robust component ensures outstanding quality and longevity, making it perfect for various electronic projects. With exceptional temperature resilience and ease of integration, the STBV42G-AP empowers engineers and designers to elevate their creations with confidence and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protects the transistor from environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for faster switching speeds and is commonly used in amplification and switching applications, enhancing performance.

Configuration: SINGLE

This single transistor configuration is ideal for compact designs, reducing space requirements in electronic circuits.

Transistor Application: SWITCHING

Designed for switching applications, this BJT provides reliable operation in on-off states, crucial for efficient control in electronic devices.

Package Shape: ROUND

The round package shape can facilitate easier mounting in various circuit boards, ensuring compatibility with multiple design layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and reliability in solder joints, making the transistor more durable in high-stress environments.

No. of Terminals: 3

Having three terminals allows for versatile circuit designs, providing options for input, output, and ground connections.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this BJT can handle moderate power levels, making it suitable for a range of electronic applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-efficient and can be advantageous for various assembly techniques and compact designs.

Minimum DC Current Gain (hFE): 5

A minimum current gain of 5 ensures that even a small input current can control a larger output current, making it effective for amplification purposes.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C increases the reliability of the transistor in high-temperature environments, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 400 V

A maximum voltage rating of 400 V makes this BJT suitable for high-voltage applications, providing flexibility in the types of circuits it can be used in.

Transistor Element Material: SILICON

Silicon as the element material offers excellent thermal stability and performance characteristics, ensuring reliability over time and varied operating conditions.

Maximum Collector Current (IC): 1 A

The maximum collector current of 1 A allows this BJT to drive moderate loads, making it suitable for various power management tasks.

Terminal Finish: MATTE TIN

The matte tin terminal finish improves solderability and corrosion resistance, ensuring long-term performance in circuit applications.

Terminal Position: BOTTOM

Bottom terminal positioning provides efficient space utilization on circuit boards and can improve overall circuit integrity.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STBV42G-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV42G-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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