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STX13005

STMicroelectronics

STX13005 by STMicroelectronics

STX13005 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,980 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,980

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-

-

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LIBRA Elektronik GmbH

Germany . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,500

-

-

-

-

Digiode

USA . 3,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,340

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-

-

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Anansix

USA . 399 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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399

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-

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Fibra_Brandt Electronic GMBH

Germany . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,456 parts In-Stock

1+ parts

$1.744

100+ parts

-

1k+ parts

$1.570

10k+ parts

-

1,456

$1.744

-

$1.570

-

Benley Electronics

USA . 2 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$1.750

-

-

-

MKK Technologies

India . 1,334 parts In-Stock

1+ parts

$3.280

100+ parts

-

1k+ parts

-

10k+ parts

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1,334

$3.280

-

-

-

DigiPath Technology Company

USA . 1,334 parts In-Stock

1+ parts

$3.280

100+ parts

-

1k+ parts

-

10k+ parts

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1,334

$3.280

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-

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Microchip USA

USA . 7,758 parts In-Stock

1+ parts

$4.160

100+ parts

-

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10k+ parts

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7,758

$4.160

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Ampacity Inc.

Singapore . 1,537 parts In-Stock

1+ parts

$5.050

100+ parts

-

1k+ parts

-

10k+ parts

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1,537

$5.050

-

-

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AZTECH Wire

Italy . 1,138 parts In-Stock

1+ parts

$10.270

100+ parts

-

1k+ parts

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10k+ parts

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1,138

$10.270

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-

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Perfect Parts

USA . 30,451 parts In-Stock

1+ parts

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100+ parts

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30,451

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Kepictronics

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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Corphita

USA . 3,534 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,534

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-

-

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Parana Technologies

USA . 811 parts In-Stock

1+ parts

-

100+ parts

$2.086

1k+ parts

-

10k+ parts

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811

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$2.086

-

-

Overview

Elevate your projects with the STX13005 by STMicroelectronics, a small signal BJT designed for seamless switching applications. Renowned for its reliability and high performance, this NPN transistor ensures exceptional power efficiency and robustness in demanding environments. With STMicroelectronics' commitment to quality, you can trust that the STX13005 delivers unmatched value, making it the ideal choice for innovative electronics across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection against environmental factors, making this BJT reliable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this device allows for efficient switching and amplification, making it suitable for a wide range of electronic applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and layout, enhancing the ease of use in various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid on-off control, making it ideal for power management circuits.

Package Shape: ROUND

The round package shape enables effective thermal management and facilitates placement in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong physical connection on PCBs, enhancing durability and reliability in challenging conditions.

No. of Terminals: 3

The three-terminal configuration allows for easy integration into circuits while providing necessary connections for functionality.

Maximum Power Dissipation (Abs): 2.8 W

With a maximum power dissipation of 2.8 W, this transistor can handle substantial load without overheating, ensuring stable performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is designed for effective thermal dissipation and efficient use of space in electronic designs.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain (hFE) of 8 indicates that the transistor can efficiently amplify weak signals, making it a valuable component in amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is suitable for high-temperature environments, ensuring reliability under extreme conditions.

Maximum Collector-Emitter Voltage: 400 V

A high maximum collector-emitter voltage of 400 V makes this product versatile and capable of handling high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material optimizes performance, providing efficient conductivity and reliability in electronic components.

Maximum Collector Current (IC): 3 A

The ability to handle a maximum collector current of 3 A ensures this transistor can manage substantial loads, ideal for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability, ensuring a reliable connection in electronic assemblies.

Terminal Position: BOTTOM

Bottom terminal positioning allows for effective PCB layout and optimized space usage, facilitating easier integration into designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13005 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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