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STX13003G-AP

STMicroelectronics

STX13003G-AP by STMicroelectronics

STX13003G-AP by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It is ideal for switching applications, offering a min DC current gain of 5 and max power dissipation of 1.5W in a cylindrical package style.

Median Price

$0.155

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.155

2,000

-

-

-

$0.155

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

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-

10

$0.178

-

-

-

Digiode

USA . 3,119 parts In-Stock

1+ parts

$0.703

100+ parts

-

1k+ parts

-

10k+ parts

-

3,119

$0.703

-

-

-

Anansix

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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2,100

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-

-

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Vyrian

USA . 1,588 parts In-Stock

1+ parts

-

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1,588

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,392 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

$0.175

4,392

$0.178

-

-

$0.175

Argo Parts USA

USA . 3,128 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

$0.173

3,128

$0.178

-

-

$0.173

IDEA Electronic Components Group

UK . 429 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

$0.376

10k+ parts

-

429

$0.418

-

$0.376

-

Ampacity Inc.

Singapore . 1,732 parts In-Stock

1+ parts

$0.630

100+ parts

-

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-

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-

1,732

$0.630

-

-

-

Corphita

USA . 1,856 parts In-Stock

1+ parts

$0.666

100+ parts

-

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-

1,856

$0.666

-

-

-

MKK Technologies

India . 1,456 parts In-Stock

1+ parts

$0.785

100+ parts

-

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-

10k+ parts

-

1,456

$0.785

-

-

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DigiPath Technology Company

USA . 1,456 parts In-Stock

1+ parts

$0.785

100+ parts

-

1k+ parts

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10k+ parts

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1,456

$0.785

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 19,932 parts In-Stock

1+ parts

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19,932

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Perfect Parts

USA . 15,492 parts In-Stock

1+ parts

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15,492

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-

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

1+ parts

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100+ parts

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6,000

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Alle Elektronik GmbH

Germany . 2,153 parts In-Stock

1+ parts

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100+ parts

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2,153

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-

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Parana Technologies

USA . 790 parts In-Stock

1+ parts

-

100+ parts

$0.499

1k+ parts

-

10k+ parts

-

790

-

$0.499

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.175

1k+ parts

$0.170

10k+ parts

$0.166

50

-

$0.175

$0.170

$0.166

Overview

Enhance your electronic projects with the STX13003G-AP by STMicroelectronics. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor delivers unmatched performance and reliability for all your switching needs. Whether you're working on amplifiers, power supplies, or control circuits, this NPN transistor offers seamless functionality and durability. With a maximum collector-emitter voltage of 400V and a maximum operating temperature of 150°C, the STX13003G-AP ensures efficient operation and consistent results every time. Upgrade your designs with this high-quality component and experience the difference in performance and accuracy.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, ideal for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, versatile choice.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: SWITCHING

Designed for efficient switching operations, suitable for various electronic applications.

Package Shape: ROUND

Compact design for space-saving installations.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections during soldering.

No. of Terminals: 3

Simple and straightforward connectivity.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power loads, suitable for many applications.

Package Style (Meter): CYLINDRICAL

Easily fits into cylindrical spaces or mounts.

Minimum DC Current Gain (hFE): 5

Provides consistent amplification capabilities for reliable performance.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 400 V

Allows for high voltage operations, versatile choice for different circuits.

Transistor Element Material: SILICON

Offers reliable performance and durability.

Maximum Collector Current (IC): 1 A

Can handle moderate current loads, suitable for various applications.

Maximum Turn Off Time (toff): 4700 ns

Efficient turn-off time for switching operations, ensuring quick response.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures good electrical contact.

Terminal Position: BOTTOM

Simplifies PCB layout and assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13003G-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Trade Compliance

STX13003G-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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