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STX13005-AP

STMicroelectronics

STX13005-AP by STMicroelectronics

STX13005-AP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 3A IC, and 2.8W power dissipation. Ideal for switching applications due to its single configuration and hFE of 8, it operates up to 150°C in a cylindrical package with matte tin finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,772 parts In-Stock

1+ parts

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2,772

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Digiode

USA . 2,486 parts In-Stock

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2,486

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Vyrian

USA . 257 parts In-Stock

1+ parts

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257

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Nova Conductors

Japan . 21 parts In-Stock

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21

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 660 parts In-Stock

1+ parts

$0.664

100+ parts

-

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660

$0.664

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IDEA Electronic Components Group

UK . 108 parts In-Stock

1+ parts

$1.156

100+ parts

-

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$1.041

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108

$1.156

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$1.041

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Aztec Data Supply Inc.

USA . 1,913 parts In-Stock

1+ parts

$1.464

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1,913

$1.464

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MKK Technologies

India . 696 parts In-Stock

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$2.175

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696

$2.175

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DigiPath Technology Company

USA . 696 parts In-Stock

1+ parts

$2.175

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696

$2.175

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AZTECH Wire

Italy . 524 parts In-Stock

1+ parts

$14.017

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524

$14.017

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Ampacity Inc.

Singapore . 1,443 parts In-Stock

1+ parts

$48.050

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1,443

$48.050

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Continental Prestige Electronics

USA . 2,800 parts In-Stock

1+ parts

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2,800

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Argo Parts USA

USA . 2,587 parts In-Stock

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2,587

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Corphita

USA . 1,497 parts In-Stock

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1,497

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Parana Technologies

USA . 1,250 parts In-Stock

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$1.383

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1,250

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$1.383

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Looking for a reliable and versatile Small Signal Bipolar Junction Transistor (BJT)? Look no further than the STX13005-AP by STMicroelectronics! With a reputation for high-quality components, STMicroelectronics delivers top-notch performance in the realm of switching applications. The NPN configuration and maximum collector-emitter voltage of 400V make this transistor perfect for a wide range of projects. Trust in the value and benefits that STMicroelectronics brings to the table with the STX13005-AP – your go-to choice for all your transistor needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type:

NPN - Offers versatile use in various electronic circuits and applications.

Configuration:

SINGLE - Simplifies circuit design and integration, making it easier to use.

Transistor Application:

SWITCHING - Ideal for fast switching operations, suitable for a wide range of electronic devices.

Package Shape:

ROUND - Allows for easy mounting and installation in compact spaces.

Terminal Form:

THROUGH-HOLE - Facilitates easy soldering and circuit board assembly.

No. of Terminals:

3 - Provides flexibility in connecting the transistor to other components.

Maximum Power Dissipation (Abs):

2.8 W - Ensures reliable performance under high power conditions.

Package Style (Meter):

CYLINDRICAL - Offers a standardized form factor for compatibility with various applications.

Minimum DC Current Gain (hFE):

8 - Ensures consistent amplification of current for reliable operation.

Maximum Operating Temperature:

150 °C - Allows for use in a wide range of temperature environments.

Maximum Collector-Emitter Voltage:

400 V - Provides a high voltage tolerance for increased reliability.

Transistor Element Material:

SILICON - Offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC):

3 A - Allows for high current applications without risk of damage.

Terminal Finish:

MATTE TIN - Provides good conductivity for reliable electrical connections.

Terminal Position:

BOTTOM - Facilitates easy mounting and integration into electronic systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13005-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13005-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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