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STX1F10

STMicroelectronics

STX1F10 by STMicroelectronics

STX1F10 by STMicroelectronics is a robust NPN BJT designed for high-performance applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for signal amplification in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,967 parts In-Stock

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1,967

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Vyrian

USA . 561 parts In-Stock

1+ parts

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561

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Digiode

USA . 195 parts In-Stock

1+ parts

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195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 13 parts In-Stock

1+ parts

$0.526

100+ parts

-

1k+ parts

$0.474

10k+ parts

-

13

$0.526

-

$0.474

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MKK Technologies

India . 545 parts In-Stock

1+ parts

$0.990

100+ parts

-

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545

$0.990

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DigiPath Technology Company

USA . 545 parts In-Stock

1+ parts

$0.990

100+ parts

-

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545

$0.990

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Alle Elektronik GmbH

Germany . 4,457 parts In-Stock

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4,457

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Parana Technologies

USA . 1,649 parts In-Stock

1+ parts

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100+ parts

$0.629

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1,649

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$0.629

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Corphita

USA . 994 parts In-Stock

1+ parts

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994

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Overview

Unlock the potential of your circuit designs with the STX1F10 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance NPN transistor offers exceptional reliability and efficiency for a variety of applications, from automotive to consumer electronics. With a robust build and impressive power handling capabilities, the STX1F10 ensures long-lasting performance while simplifying your design process. Elevate your projects with STMicroelectronics’ commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, making this transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifying and switching applications, providing versatility for designers.

Configuration: SINGLE

The single configuration simplifies circuit design and space requirements, making it suitable for compact applications.

Package Shape: ROUND

The round package shape allows for better thermal performance and easier integration into various circuit designs.

Terminal Form: WIRE

Wire terminals provide flexibility in mounting and connections, allowing for easy integration into various systems.

No. of Terminals: 3

A 3-terminal design is typical for BJTs, ensuring straightforward circuit connections and enhancing usability.

Maximum Power Dissipation (Abs): 2.8 W

With a maximum power dissipation of 2.8 W, this transistor can handle significant loads, making it suitable for high-power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-efficient and allows for effective heat dissipation, improving reliability in performance.

Minimum DC Current Gain (hFE): 14

A minimum DC current gain of 14 indicates good amplification capability, making it effective in various signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliability and performance in demanding thermal environments.

Maximum Collector-Emitter Voltage: 400 V

A collector-emitter voltage rating of 400 V makes this transistor suitable for high-voltage applications, increasing its versatility.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its excellent electrical properties, enhancing performance and reliability.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor is capable of handling significant current loads, providing flexibility in usage.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and provides better corrosion resistance, enhancing product longevity.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient PCB layout and effective use of space in electronic designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX1F10 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

14

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

STX1F10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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