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STX13004G-AP

STMicroelectronics

STX13004G-AP by STMicroelectronics

STX13004G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.

Median Price

$0.143

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,000 parts In-Stock

1+ parts

$0.143

100+ parts

$0.143

1k+ parts

$0.143

10k+ parts

$0.143

4,000

$0.143

$0.143

$0.143

$0.143

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.143

1k+ parts

$0.143

10k+ parts

$0.143

4,000

-

$0.143

$0.143

$0.143

Chip1Stop

Japan . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,806 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

-

10k+ parts

-

4,806

$0.136

-

-

-

Vyrian

USA . 2,633 parts In-Stock

1+ parts

$0.143

100+ parts

-

1k+ parts

-

10k+ parts

-

2,633

$0.143

-

-

-

Anansix

USA . 115 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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115

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,926 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

-

10k+ parts

-

3,926

$0.122

-

-

-

Corphita

USA . 550 parts In-Stock

1+ parts

$0.129

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$0.129

-

-

-

Component Stockers USA

USA . 5,240 parts In-Stock

1+ parts

$0.170

100+ parts

$0.170

1k+ parts

$0.170

10k+ parts

-

5,240

$0.170

$0.170

$0.170

-

IDEA Electronic Components Group

UK . 1,944 parts In-Stock

1+ parts

$1.219

100+ parts

-

1k+ parts

$1.097

10k+ parts

-

1,944

$1.219

-

$1.097

-

MKK Technologies

India . 1,488 parts In-Stock

1+ parts

$2.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,488

$2.292

-

-

-

DigiPath Technology Company

USA . 1,488 parts In-Stock

1+ parts

$2.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,488

$2.292

-

-

-

Perfect Parts

USA . 6,606 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,606

-

-

-

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Alle Elektronik GmbH

Germany . 3,296 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,296

-

-

-

-

Parana Technologies

USA . 222 parts In-Stock

1+ parts

-

100+ parts

$1.458

1k+ parts

-

10k+ parts

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222

-

$1.458

-

-

Overview

Elevate your designs with the STX13004G-AP from STMicroelectronics, a trusted leader in high-performance semiconductor solutions. This robust NPN transistor excels in switching applications, offering remarkable reliability and efficiency even in demanding environments. With its superior thermal capabilities and compact cylindrical package, it seamlessly integrates into various electronics, ensuring optimal performance and longevity—empowering your innovations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides a lightweight and durable construction, which helps in reducing the overall weight of the device and improving its longevity.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for efficient switching and amplification in electronic circuits, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to implement in various projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control power, which is essential in many electronic systems.

Package Shape: ROUND

The round package shape aids in thermal management and can provide better compatibility with cylindrical circuit layouts.

Terminal Form: WIRE

Wire terminals enable flexible connections and can be easily soldered, allowing for versatile integration into circuits.

No. of Terminals: 3

With three terminals, this transistor is ideal for common circuit configurations, maximizing its usability in various designs.

Maximum Power Dissipation (Abs): 2.5 W

Highlights the ability to handle significant power levels, making it suitable for robust applications without overheating issues.

Package Style (Meter): CYLINDRICAL

The cylindrical package style can enhance stability in physical assembly and allows for efficient heat dissipation.

Minimum DC Current Gain (hFE): 6

With a minimum DC current gain of 6, this transistor offers substantial amplification, proving useful in many signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in demanding environments, making it suitable for automotive and industrial applications.

Maximum Collector-Emitter Voltage: 400 V

A high collector-emitter voltage rating allows this transistor to be used in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the semiconductor material ensures good electrical performance and thermal stability, making it a reliable choice for various applications.

Maximum Collector Current (IC): 2 A

Supporting a maximum collector current of 2 A allows for effective control in power applications, creating possibilities for high-load uses.

Terminal Finish: MATTE TIN

Matte tin terminals reduce the risk of corrosion and improve solderability, ensuring reliable electrical connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning supports compact circuit designs, contributing to lower-profile device assemblies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13004G-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13004G-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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