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STX13004G

STMicroelectronics

STX13004G by STMicroelectronics

STX13004G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,721 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,721

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-

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Anansix

USA . 1,824 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,824

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Vyrian

USA . 1,617 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,617

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.401

100+ parts

$0.365

1k+ parts

$0.329

10k+ parts

-

200

$0.401

$0.365

$0.329

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IDEA Electronic Components Group

UK . 2,160 parts In-Stock

1+ parts

$1.727

100+ parts

-

1k+ parts

$1.554

10k+ parts

-

2,160

$1.727

-

$1.554

-

MKK Technologies

India . 1,277 parts In-Stock

1+ parts

$3.247

100+ parts

-

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10k+ parts

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1,277

$3.247

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DigiPath Technology Company

USA . 1,277 parts In-Stock

1+ parts

$3.247

100+ parts

-

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10k+ parts

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1,277

$3.247

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Ampacity Inc.

Singapore . 1,045 parts In-Stock

1+ parts

$56.050

100+ parts

-

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-

10k+ parts

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1,045

$56.050

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-

-

Perfect Parts

USA . 4,609 parts In-Stock

1+ parts

-

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4,609

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Corphita

USA . 4,580 parts In-Stock

1+ parts

-

100+ parts

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4,580

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Alle Elektronik GmbH

Germany . 3,963 parts In-Stock

1+ parts

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100+ parts

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3,963

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Parana Technologies

USA . 1,764 parts In-Stock

1+ parts

-

100+ parts

$2.065

1k+ parts

-

10k+ parts

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1,764

-

$2.065

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Overview

Elevate your electronic projects with the STX13004G from STMicroelectronics, a trusted leader in innovation. This NPN small signal transistor excels in switching applications, providing reliable performance and durability at elevated temperatures. Its compact design ensures seamless integration into various circuits, making it ideal for everything from consumer electronics to automotive systems. Experience unmatched quality and efficiency that empower your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides robust protection against environmental factors, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

An NPN configuration is versatile and widely used in switching applications, allowing for efficient control of current flow.

Configuration: SINGLE

A single configuration is ideal for compact designs, providing ease of integration into circuits without unnecessary complexity.

Transistor Application: SWITCHING

Designed for switching purposes, this transistor is well-suited for applications requiring fast response times and high efficiency.

Package Shape: ROUND

The round package shape facilitates better heat distribution and can be more space-efficient in various mounting scenarios.

Terminal Form: WIRE

Wire terminal form allows for easy soldering and connections in circuit boards, ensuring reliable electrical performance.

No. of Terminals: 3

Three terminals provide straightforward connections, making it compatible with standard circuit configurations.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this transistor can handle significant loads, making it suitable for a wide range of applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style aids in heat dissipation and can fit into various socket designs, enhancing mounting flexibility.

Minimum DC Current Gain (hFE): 6

A minimum current gain of 6 ensures adequate amplification capabilities, making this transistor effective in amplification applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this product to function efficiently in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V ensures the transistor can manage high voltage applications without breaking down.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical properties, making it a standard choice for reliable performance in transistors.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle substantial current workloads, suitable for many power applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and helps reduce oxidation, ensuring consistent performance over time.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient PCB layouts, optimizing space and ensuring effective connection in circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13004G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13004G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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