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STX13004-AP

STMicroelectronics

STX13004-AP by STMicroelectronics

STX13004-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

Median Price

$0.143

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,983 parts In-Stock

1+ parts

$0.143

100+ parts

$0.143

1k+ parts

$0.143

10k+ parts

$0.143

3,983

$0.143

$0.143

$0.143

$0.143

Verical

USA . 3,983 parts In-Stock

1+ parts

-

100+ parts

$0.143

1k+ parts

$0.143

10k+ parts

$0.143

3,983

-

$0.143

$0.143

$0.143

Chip1Stop

Japan . 3,983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,983

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 438 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

-

10k+ parts

-

438

$0.136

-

-

-

Vyrian

USA . 2,460 parts In-Stock

1+ parts

$0.143

100+ parts

-

1k+ parts

-

10k+ parts

-

2,460

$0.143

-

-

-

Anansix

USA . 1,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,936

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,178 parts In-Stock

1+ parts

$0.129

100+ parts

-

1k+ parts

-

10k+ parts

-

3,178

$0.129

-

-

-

IDEA Electronic Components Group

UK . 1,143 parts In-Stock

1+ parts

$1.107

100+ parts

-

1k+ parts

$0.996

10k+ parts

-

1,143

$1.107

-

$0.996

-

MKK Technologies

India . 50 parts In-Stock

1+ parts

$2.081

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$2.081

-

-

-

DigiPath Technology Company

USA . 50 parts In-Stock

1+ parts

$2.081

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$2.081

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,000

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Perfect Parts

USA . 8,758 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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8,758

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-

-

-

Alle Elektronik GmbH

Germany . 4,012 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,012

-

-

-

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Parana Technologies

USA . 1,841 parts In-Stock

1+ parts

-

100+ parts

$1.323

1k+ parts

-

10k+ parts

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1,841

-

$1.323

-

-

Overview

Unlock unparalleled performance with the STX13004-AP from STMicroelectronics, a reliable NPN small signal BJT that excels in switching applications. Crafted from high-quality silicon, this transistor ensures exceptional durability and efficiency even in demanding environments up to 150 °C. With STMicroelectronics’ legacy of innovation, customers benefit from robust design and widespread compatibility across various electronic devices. Elevate your projects with unmatched value and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package provides durability and resistance to environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in signal amplification and switching applications, making this product versatile for different electronic designs.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier for engineers to incorporate into their systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control currents in devices, enhancing performance in digital circuits.

Package Shape: ROUND

The round package shape allows for efficient thermal dissipation and makes it easier to mount on PCBs, optimizing overall performance.

Terminal Form: WIRE

Wire terminals enable easy soldering and connections, ensuring robust integration into electronic assemblies.

No. of Terminals: 3

Three terminals facilitate easy connection to power and control signals, providing a straightforward interface for various applications.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this transistor can handle substantial power loads, making it suitable for high-performance applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style contributes to better thermal and electrical performance while maintaining a compact form factor.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 indicates good amplification capability, enhancing signal processing in various circuits.

Maximum Operating Temperature: 150 C

A high maximum operating temperature ensures reliable performance in demanding environments, expanding the range of applications.

Maximum Collector-Emitter Voltage: 400 V

This high voltage tolerance allows the transistor to be used in applications requiring robust voltage handling, increasing versatility.

Transistor Element Material: SILICON

Silicon ensures excellent electronic properties and thermal stability, making this transistor reliable for a wide range of electronic circuits.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor is capable of driving higher loads, suitable for power management.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and corrosion resistance, enhancing long-term reliability in circuits.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for PCB layouts, allowing for better space management and integration into compact designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX13004-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13004-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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