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SO642

STMicroelectronics

SO642 by STMicroelectronics

SO642 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,644 parts In-Stock

1+ parts

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3,644

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Vyrian

USA . 2,381 parts In-Stock

1+ parts

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2,381

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ComSIT Distribution GmbH

Germany . 2,345 parts In-Stock

1+ parts

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2,345

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Anansix

USA . 1,717 parts In-Stock

1+ parts

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1,717

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LittleDiode

UK . 38 parts In-Stock

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38

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ECAB

Sweden . 29 parts In-Stock

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29

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,370 parts In-Stock

1+ parts

$1.055

100+ parts

-

1k+ parts

$0.950

10k+ parts

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2,370

$1.055

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$0.950

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MKK Technologies

India . 790 parts In-Stock

1+ parts

$1.984

100+ parts

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790

$1.984

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DigiPath Technology Company

USA . 790 parts In-Stock

1+ parts

$1.984

100+ parts

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790

$1.984

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AZTECH Wire

Italy . 1,209 parts In-Stock

1+ parts

$8.790

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1,209

$8.790

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Component Stockers USA

USA . 730 parts In-Stock

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$99.990

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730

$99.990

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Kepictronics

USA . 42,000 parts In-Stock

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42,000

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A-Z Elektronik GmbH

Germany . 8,700 parts In-Stock

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8,700

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Corphita

USA . 3,530 parts In-Stock

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3,530

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Parana Technologies

USA . 402 parts In-Stock

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$1.262

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402

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$1.262

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Overview

Elevate your projects with the SO642 from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance NPN small signal transistor is designed for efficient switching applications, delivering reliability and exceptional quality in a compact footprint. With a robust maximum collector-emitter voltage and impressive thermal stability, the SO642 ensures optimal performance across diverse applications. Experience the benefits of enhanced efficiency and durability that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stress, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching, making this transistor a preferred choice in most digital circuits.

Configuration: SINGLE

A single configuration provides simplicity in design and integration into compact circuits, ideal for space-constrained applications.

Transistor Application: SWITCHING

Designed for switching applications, it can effectively control power in electronic devices, enhancing operational efficiency.

Surface Mount: YES

Surface mount technology allows for automated assembly processes and saves board space, making it convenient for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on circuit boards, enabling denser component layouts.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering during assembly and enhance mechanical robustness, ensuring reliable connections.

No. of Terminals: 3

With three terminals, this BJT is straightforward to implement in basic switching and amplification applications.

Maximum Power Dissipation: 0.31 W

The power dissipation rating indicates effective thermal management, allowing for reliable operation in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact, making it suitable for space-sensitive designs and applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 suggests good amplification capability, which is essential for effective circuit design.

Maximum Operating Temperature: 150 °C

This high operating temperature rating ensures reliability in demanding environments, making it suitable for automotive and industrial applications.

Maximum Collector-Emitter Voltage: 300 V

A high breakdown voltage allows this BJT to operate in high-voltage applications, thereby broadening its usability.

Transistor Element Material: SILICON

Silicon as the element material offers favorable electrical characteristics and reliability, a standard in modern electronics.

Maximum Collector Current (IC): 0.1 A

The collector current rating indicates that it can handle moderate loads, making it suitable for many standard applications.

Terminal Position: DUAL

Dual terminal positioning optimizes chip layout and enhances circuit design flexibility.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz allows for operation in high-frequency applications, which is necessary for modern communication devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SO642 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SO642 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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