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STPSA42-AP

STMicroelectronics

STPSA42-AP by STMicroelectronics

STPSA42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,898 parts In-Stock

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10,898

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Digiode

USA . 4,578 parts In-Stock

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4,578

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Anansix

USA . 1,468 parts In-Stock

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1,468

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.668

100+ parts

$0.608

1k+ parts

$0.548

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-

200

$0.668

$0.608

$0.548

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IDEA Electronic Components Group

UK . 1,769 parts In-Stock

1+ parts

$1.033

100+ parts

-

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$0.930

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1,769

$1.033

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$0.930

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MKK Technologies

India . 350 parts In-Stock

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$1.943

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350

$1.943

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DigiPath Technology Company

USA . 350 parts In-Stock

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$1.943

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350

$1.943

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AZTECH Wire

Italy . 906 parts In-Stock

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$16.770

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906

$16.770

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Alle Elektronik GmbH

Germany . 9,733 parts In-Stock

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9,733

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QUARKTWIN TECHNOLOGY LTD

USA . 9,311 parts In-Stock

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Corphita

USA . 4,843 parts In-Stock

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4,843

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Parana Technologies

USA . 2,013 parts In-Stock

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$1.235

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2,013

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$1.235

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Overview

Unlock the potential of your projects with the STPSA42-AP by STMicroelectronics—a trusted leader in innovation and quality. This NPN small signal BJT excels in switching applications, offering reliability and performance you can depend on. With its robust design and high temperature tolerance, it’s perfect for everything from consumer electronics to industrial automation. Experience enhanced efficiency and peace of mind with a product backed by STMicroelectronics' commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material allows for lightweight and durable packaging, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for most switching and amplification applications, providing better performance in low power scenarios.

Configuration: SINGLE

Single configuration makes it easier to integrate into circuits, simplifying design and reducing potential failure points.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient operation and faster response times.

Package Shape: ROUND

The round package shape facilitates easy placement on circuit boards, ensuring a compact footprint and efficient use of space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical stability and secure soldering, enhancing reliability in harsh environments.

No. of Terminals: 3

Three terminals allow for a straightforward design while facilitating both input and output connections efficiently.

Maximum Power Dissipation (Abs): 0.625 W

A maximum power dissipation of 0.625 W ensures that it can handle reasonable loads without overheating, suitable for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal dissipation characteristics, improving overall performance under load.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 provides good amplification capabilities, making it well-suited for signal processing.

Maximum Operating Temperature: 150 °C

Its ability to operate at high temperatures ensures reliable performance in demanding environments without failure.

Maximum Collector-Emitter Voltage: 300 V

With a maximum voltage rating of 300 V, it can handle high voltage applications, offering versatility in circuit designs.

Transistor Element Material: SILICON

Silicon transistors are a standard in the industry, providing reliable performance and durability across many applications.

Maximum Collector Current (IC): 0.5 A

A collector current capability of 0.5 A makes it suitable for various low to medium power applications efficiently.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures excellent solderability and corrosion resistance, which enhances reliability over time.

Terminal Position: BOTTOM

Bottom terminal positioning promotes efficient layout in circuit designs, aiding in optimized board space and connectivity.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz supports high-speed applications, providing better performance for communication circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STPSA42-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STPSA42-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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