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STPSA92

STMicroelectronics

STPSA92 by STMicroelectronics

STPSA92 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6 parts In-Stock

1+ parts

$0.018

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6

$0.018

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DigiKey

USA . 349 parts In-Stock

1+ parts

$0.330

100+ parts

$0.126

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-

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349

$0.330

$0.126

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-

Chip1Stop

Japan . 6 parts In-Stock

1+ parts

-

100+ parts

$0.030

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-

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6

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$0.030

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,385 parts In-Stock

1+ parts

$0.017

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4,385

$0.017

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Vyrian

USA . 11,030 parts In-Stock

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11,030

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Anansix

USA . 350 parts In-Stock

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350

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Distributors (Availability)

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Corphita

USA . 3,195 parts In-Stock

1+ parts

$0.016

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3,195

$0.016

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IDEA Electronic Components Group

UK . 1,858 parts In-Stock

1+ parts

$0.696

100+ parts

-

1k+ parts

$0.627

10k+ parts

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1,858

$0.696

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$0.627

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MKK Technologies

India . 634 parts In-Stock

1+ parts

$1.310

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634

$1.310

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DigiPath Technology Company

USA . 634 parts In-Stock

1+ parts

$1.310

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634

$1.310

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Perfect Parts

USA . 45,818 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,692 parts In-Stock

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14,692

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Kepictronics

USA . 3,480 parts In-Stock

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3,480

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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Alle Elektronik GmbH

Germany . 1,361 parts In-Stock

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1,361

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Parana Technologies

USA . 1,129 parts In-Stock

1+ parts

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$0.833

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1,129

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$0.833

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Overview

Unlock unparalleled performance with the STPSA92 PNP transistor from STMicroelectronics, a leader in cutting-edge semiconductor technology. Designed for efficient switching applications, this robust device ensures reliability even under high temperatures and demanding conditions. With its durable plastic-epoxy package and easy-to-use through-hole design, the STPSA92 is perfect for a wide range of electronic projects, delivering consistent quality and exceptional value to elevate your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy package ensures reliability and protection of the transistor in various operating environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits where it is required to switch the ground side of the load.

Configuration: SINGLE

Single configuration makes this transistor a compact choice, minimizing space in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, enabling efficient control of electrical power.

Package Shape: ROUND

The round package shape is suited for applications requiring compact and neat arrangements on the PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are suitable for higher power applications.

No. of Terminals: 3

The three terminals facilitate simple connection and ease of use in various circuit designs.

Maximum Power Dissipation (Abs): 0.625 W

With a power dissipation capability of 0.625W, this transistor can handle moderate amounts of power, making it suitable for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is advantageous for heat dissipation and fit in standardized mounting options.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 allows for sufficient amplification of input signals before switching.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance in demanding high-temperature environments.

Maximum Collector-Emitter Voltage: 300 V

With a collector-emitter voltage limit of 300V, this transistor can be used in high-voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and high performance in electronic applications.

Maximum Collector Current (IC): 0.5 A

The 0.5A collector current capacity makes this transistor suitable for moderately high current switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and resistance to corrosion, ensuring reliable connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient layout on PCB, optimizing space and simplifying soldering.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz enables this transistor to handle high-speed switching, suitable for modern applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STPSA92 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STPSA92 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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