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STPSA42

STMicroelectronics

STPSA42 by STMicroelectronics

STPSA42 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cogito LLC

Ukraine . 10,000 parts In-Stock

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10,000

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Vyrian

USA . 5,334 parts In-Stock

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5,334

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Digiode

USA . 904 parts In-Stock

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904

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Anansix

USA . 318 parts In-Stock

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318

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LWI Electronics Inc

India . 11 parts In-Stock

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11

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,815 parts In-Stock

1+ parts

$1.494

100+ parts

-

1k+ parts

$1.345

10k+ parts

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1,815

$1.494

-

$1.345

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.513

100+ parts

$1.377

1k+ parts

$1.241

10k+ parts

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100

$1.513

$1.377

$1.241

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MKK Technologies

India . 1,830 parts In-Stock

1+ parts

$2.810

100+ parts

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1,830

$2.810

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DigiPath Technology Company

USA . 1,830 parts In-Stock

1+ parts

$2.810

100+ parts

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1,830

$2.810

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AZTECH Wire

Italy . 476 parts In-Stock

1+ parts

$11.890

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476

$11.890

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Component Stockers USA

USA . 291 parts In-Stock

1+ parts

$99.990

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291

$99.990

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Perfect Parts

USA . 90,056 parts In-Stock

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90,056

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Kepictronics

USA . 28,500 parts In-Stock

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28,500

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QUARKTWIN TECHNOLOGY LTD

USA . 16,075 parts In-Stock

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16,075

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Metaverse IC Inc.

Canada . 10,500 parts In-Stock

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10,500

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Parana Technologies

USA . 1,003 parts In-Stock

1+ parts

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100+ parts

$1.786

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1,003

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$1.786

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Corphita

USA . 935 parts In-Stock

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935

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Overview

Elevate your projects with the STPSA42 from STMicroelectronics, a trusted leader in innovation. This high-quality NPN small signal transistor excels in switching applications, offering reliability and performance you can count on. With its robust design and exceptional heat resistance, the STPSA42 ensures efficient operation in demanding environments. Experience the perfect blend of value and durability that enhances your electronic designs while maximizing efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications due to their ability to handle large amounts of current and voltage efficiently.

Configuration: SINGLE

A single configuration allows for compact designs and simplified circuitry, making integration into various systems easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable switching performance, ideal for control systems.

Package Shape: ROUND

The round package shape provides good thermal performance and effective electrical connections, enhancing overall reliability.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical stability and excellent electrical connections, making them ideal for high-reliability applications.

No. of Terminals: 3

A 3-terminal design simplifies integration into circuits and enhances versatility for various circuit configurations.

Maximum Power Dissipation (Abs): 0.625 W

With a power dissipation capability of 0.625 W, this transistor can effectively manage heat during operation, ensuring durability under load.

Package Style (Meter): CYLINDRICAL

The cylindrical package style optimizes space utilization on PCBs while maintaining accessibility for assembly and soldering.

Minimum DC Current Gain (hFE): 40

A minimum current gain of 40 indicates good amplification performance, making it an effective choice for signal amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function effectively in demanding environments without thermal failure.

Maximum Collector-Emitter Voltage: 300 V

With a high collector-emitter voltage rating of 300 V, this transistor can be used in high-voltage applications, expanding its utility.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 0.5 A

A maximum collector current rating of 0.5 A makes this transistor suitable for various medium-power applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, ensuring reliable long-term connections in various environments.

Terminal Position: BOTTOM

Bottom terminal positioning improves thermal management and contributes to a smaller footprint on the PCB.

Nominal Transition Frequency (fT): 50 MHz

With a transition frequency of 50 MHz, this transistor can operate effectively in high-speed applications, providing versatility in design.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STPSA42 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STPSA42 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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