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2N2907AUB1

STMicroelectronics

2N2907AUB1 by STMicroelectronics

2N2907AUB1 by STMicroelectronics is a PNP BJT transistor for switching applications. With hFE of 50, Vce of 60V, and Ic of 0.5A, it offers fast ton of 45ns and toff of 300ns. This SMD transistor in small outline package is ideal for compact electronic designs.

Median Price

$100.580

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 98 parts In-Stock

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$93.600

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98

$93.600

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Verical

USA . 98 parts In-Stock

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$93.600

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98

$93.600

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Chip1Stop

Japan . 100 parts In-Stock

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$100.580

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$90.060

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100

$100.580

$90.060

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DigiKey

USA . 25 parts In-Stock

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$118.340

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25

$118.340

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Mouser Electronics

USA . 21 parts In-Stock

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$118.340

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21

$118.340

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Digiode

USA . 1,177 parts In-Stock

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$91.124

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Vyrian

USA . 12,840 parts In-Stock

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Anansix

USA . 1,146 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 442 parts In-Stock

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$0.193

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$0.185

442

$0.193

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$0.185

Northwest PG Solutions

USA . 2,208 parts In-Stock

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$0.212

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$0.187

2,208

$0.212

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$0.187

IDEA Electronic Components Group

UK . 1,467 parts In-Stock

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$0.402

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$0.362

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1,467

$0.402

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$0.362

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MKK Technologies

India . 1,127 parts In-Stock

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$0.756

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$0.756

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DigiPath Technology Company

USA . 1,127 parts In-Stock

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$0.756

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$0.756

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Corphita

USA . 3,443 parts In-Stock

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$86.328

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3,443

$86.328

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Component Stockers USA

USA . 121 parts In-Stock

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$154.690

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$144.080

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121

$154.690

$144.080

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Parana Technologies

USA . 825 parts In-Stock

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$0.481

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825

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$0.481

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Overview

Unleash the power of reliable performance with the 2N2907AUB1 by STMicroelectronics. As a leading manufacturer in the industry, this PNP transistor offers superior quality and precision for switching applications. With a maximum collector-emitter voltage of 60V and a compact surface mount design, this transistor provides seamless integration and efficiency. Trust in STMicroelectronics to deliver exceptional value and unrivaled advantages, making the 2N2907AUB1 the ideal choice for your next project.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are ideal for applications requiring positive voltage polarity, making this transistor suitable for use in many electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to incorporate this transistor into a variety of circuit layouts.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly and efficiently control the flow of current in a circuit, enhancing performance and functionality.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor into compact electronic devices and PCB layouts, saving space and facilitating efficient assembly.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and secure mounting on a PCB, enhancing the durability and stability of the transistor in various applications.

No. of Terminals: 3

Three terminals provide the necessary connections for proper transistor operation and enable flexibility in circuit design, ensuring compatibility with a range of applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space-saving benefits and facilitates efficient heat dissipation, contributing to the overall performance and reliability of the transistor.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable and consistent amplification of current in the circuit, enhancing the transistor's performance in various signal processing applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor can handle higher voltage levels, making it suitable for applications that require robust voltage tolerance.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability, efficiency, and temperature resistance, ensuring stable performance and longevity in demanding operating conditions.

Maximum Turn On Time (ton): 45 ns

Fast turn-on time of 45 ns enables quick switching transitions, reducing signal delays and enhancing the overall speed and responsiveness of the transistor in switching applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can effectively handle moderate current loads in the circuit, making it suitable for a wide range of switching applications.

Maximum Turn Off Time (toff): 300 ns

Extended turn-off time of 300 ns allows for controlled switching and efficient current interruption, enhancing the reliability and performance of the transistor in switching operations.

Terminal Finish: Gold (Au)

Gold terminal finish ensures reliable electrical connections, corrosion resistance, and long-term durability, making this transistor suitable for high-reliability applications.

Terminal Position: DUAL

Dual terminal position enables flexible mounting and connectivity options, allowing for versatile integration of the transistor in various circuit configurations and applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N2907AUB1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-XDSO-N3

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

Gold (Au)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

2N2907AUB1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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