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2STR1230

STMicroelectronics

2STR1230 by STMicroelectronics

2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,996 parts In-Stock

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7,996

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Digiode

USA . 3,081 parts In-Stock

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3,081

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Anansix

USA . 2,885 parts In-Stock

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2,885

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ComSIT Distribution GmbH

Germany . 1,675 parts In-Stock

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1,675

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J2 Sourcing AB

Sweden . 1,601 parts In-Stock

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1,601

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 55 parts In-Stock

1+ parts

$0.603

100+ parts

-

1k+ parts

$0.542

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-

55

$0.603

-

$0.542

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.962

100+ parts

$0.875

1k+ parts

$0.789

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-

100

$0.962

$0.875

$0.789

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MKK Technologies

India . 784 parts In-Stock

1+ parts

$1.133

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784

$1.133

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DigiPath Technology Company

USA . 784 parts In-Stock

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$1.133

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784

$1.133

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Native Components

USA . 144 parts In-Stock

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$6.174

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144

$6.174

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AZTECH Wire

Italy . 813 parts In-Stock

1+ parts

$9.450

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813

$9.450

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Perfect Parts

USA . 95,316 parts In-Stock

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95,316

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A-Z Elektronik GmbH

Germany . 12,000 parts In-Stock

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Corphita

USA . 4,411 parts In-Stock

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Northwest PG Solutions

USA . 2,026 parts In-Stock

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$6.051

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2,026

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$6.051

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iodParts Technologies Inc.

India . 1,675 parts In-Stock

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1,675

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Parana Technologies

USA . 1,493 parts In-Stock

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$0.720

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1,493

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$0.720

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Alle Elektronik GmbH

Germany . 1,443 parts In-Stock

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1,443

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Overview

Unlock your design potential with the 2STR1230 from STMicroelectronics—a premier choice in small signal bipolar junction transistors. Renowned for its exceptional quality and reliability, STMicroelectronics brings you a device perfect for efficient switching applications. With its compact design and robust performance, the 2STR1230 empowers engineers to innovate while ensuring optimal functionality. Choose the 2STR1230 and experience unrivaled efficiency and versatility in your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials offers durability and resistance to environmental stress, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in switching applications, providing efficient performance in both analog and digital circuits.

Configuration: SINGLE

A single transistor configuration simplifies the design and keeps the circuit compact, making it suitable for space-constrained applications.

Transistor Application: SWITCHING

Designed for switching operations, this transistor is ideal for applications in power management and signal amplification.

Surface Mount: YES

Surface mount technology allows for automated assembly, streamlining production processes and reducing size in modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, making it easier to layout complex circuits.

Terminal Form: GULL WING

Gull wing terminals facilitate good soldering to the PCB, ensuring a strong electrical connection and durability.

No. of Terminals: 3

With three terminals, this transistor allows for straightforward connections, making it easy to integrate into various circuit designs.

Maximum Power Dissipation (Abs): 0.5 W

This power dissipation capability falls within a safe range for typical applications, minimizing heat generation and extending the lifespan of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and is compatible with most modern PCB layouts.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures effective amplification, making the transistor suitable for a variety of electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for use in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 30 V

With a maximum voltage of 30 V, this transistor can be used in multiple applications where moderate voltage operations are required.

Transistor Element Material: SILICON

Silicon is a highly stable semiconductor material, contributing to the overall reliability and efficiency of this transistor.

Maximum Collector Current (IC): 1.5 A

A collector current capacity of 1.5 A allows this transistor to handle moderate power levels, making it suitable for a range of applications.

Terminal Finish: MATTE TIN

The matte tin finish helps prevent corrosion and ensures good solderability, enhancing the reliability of the electrical connections.

Terminal Position: DUAL

Dual terminal positioning aids in circuit design flexibility, allowing for various layout configurations to optimize performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2STR1230 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STR1230 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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