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2STR1160

STMicroelectronics

2STR1160 by STMicroelectronics

2STR1160 by STMicroelectronics is a NPN BJT transistor with 1A IC, 60V VCE, and 0.5W power dissipation. Ideal for switching applications, it has a hFE of 85 and operates up to 150°C. This GULL WING terminal transistor comes in a small outline package suitable for surface mount technology.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,090 parts In-Stock

1+ parts

$0.460

100+ parts

$0.212

1k+ parts

$0.127

10k+ parts

$0.098

6,090

$0.460

$0.212

$0.127

$0.098

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

-

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6,000

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Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.148

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-

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15

$0.148

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Digiode

USA . 790 parts In-Stock

1+ parts

$0.446

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790

$0.446

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LIBRA Elektronik GmbH

Germany . 14,328 parts In-Stock

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14,328

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Vyrian

USA . 7,319 parts In-Stock

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7,319

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VNN

France . 4,447 parts In-Stock

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4,447

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Sensible Micro Corp

USA . 2,702 parts In-Stock

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2,702

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Anansix

USA . 2,006 parts In-Stock

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2,006

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Semtec, LLC

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Corohmni

South Africa . 41 parts In-Stock

1+ parts

$0.148

100+ parts

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41

$0.148

-

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Continental Prestige Electronics

USA . 4,267 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

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$0.145

4,267

$0.148

-

-

$0.145

Argo Parts USA

USA . 2,524 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

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$0.144

2,524

$0.148

-

-

$0.144

Ampacity Inc.

Singapore . 10,348 parts In-Stock

1+ parts

$0.306

100+ parts

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10,348

$0.306

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Semicontronic

India . 10,169 parts In-Stock

1+ parts

$0.306

100+ parts

$0.298

1k+ parts

$0.297

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-

10,169

$0.306

$0.298

$0.297

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Aztec Data Supply Inc.

USA . 3,189 parts In-Stock

1+ parts

$0.330

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-

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3,189

$0.330

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Corphita

USA . 1,053 parts In-Stock

1+ parts

$0.423

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1,053

$0.423

-

-

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.054

100+ parts

$0.959

1k+ parts

$0.864

10k+ parts

-

50

$1.054

$0.959

$0.864

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IDEA Electronic Components Group

UK . 1,870 parts In-Stock

1+ parts

$1.286

100+ parts

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$1.158

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1,870

$1.286

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$1.158

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MKK Technologies

India . 2,086 parts In-Stock

1+ parts

$2.419

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2,086

$2.419

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DigiPath Technology Company

USA . 2,086 parts In-Stock

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$2.419

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2,086

$2.419

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Kepictronics

USA . 46,660 parts In-Stock

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46,660

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QUARKTWIN TECHNOLOGY LTD

USA . 19,978 parts In-Stock

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A-Z Elektronik GmbH

Germany . 16,575 parts In-Stock

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16,575

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Infinite Electronics LLP (Excess)

. 9,002 parts In-Stock

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Lixinc

USA . 7,288 parts In-Stock

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7,288

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Microchip USA

USA . 5,957 parts In-Stock

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5,957

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Alle Elektronik GmbH

Germany . 3,891 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Computer Components Inc. - USA

USA . 2,927 parts In-Stock

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2,927

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Parana Technologies

USA . 1,303 parts In-Stock

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$1.538

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1,303

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$1.538

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Netroflash

USA . 500 parts In-Stock

1+ parts

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$0.145

1k+ parts

$0.141

10k+ parts

$0.138

500

-

$0.145

$0.141

$0.138

GreenTree Electronics

Israel . 300 parts In-Stock

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300

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Overview

Upgrade your electronic devices with the high-quality 2STR1160 Small Signal Bipolar Junction Transistor by STMicroelectronics. Manufactured with precision and expertise, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 60V, this transistor offers reliable performance and efficiency. Its compact design and surface mount capability make it ideal for a wide range of electronic projects. Trust STMicroelectronics to deliver top-notch components that enhance the functionality and longevity of your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling current flow.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Compact shape and size allow for efficient use of space on the PCB, ideal for miniaturized electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and secure electrical connections, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Provides the necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power dissipation levels, suitable for various applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the PCB, making it ideal for designs with size constraints.

Minimum DC Current Gain (hFE): 85

Consistent and reliable current gain ensures stable transistor operation in different circuit conditions.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 60 V

Can handle moderately high voltages, expanding the range of possible circuit applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making it a preferable choice for transistor fabrication.

Maximum Collector Current (IC): 1 A

Capable of handling significant current levels, suitable for various switching and amplification tasks.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish for the terminals, ensuring long-term stability in circuit operation.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options for different PCB designs.

Peak Reflow Temperature °C: 210

Can withstand high reflow temperatures during PCB assembly, ensuring proper soldering and reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2STR1160 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

85

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

210

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STR1160 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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