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2STR1230G

STMicroelectronics

2STR1230G by STMicroelectronics

2STR1230G by STMicroelectronics is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 30V and can handle a max collector current of 1.5A. With a small outline package style and matte tin terminal finish, it operates at up to 150 °C making it ideal for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,186 parts In-Stock

1+ parts

-

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3,186

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Anansix

USA . 2,384 parts In-Stock

1+ parts

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2,384

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Vyrian

USA . 152 parts In-Stock

1+ parts

-

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152

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 785 parts In-Stock

1+ parts

$0.288

100+ parts

-

1k+ parts

-

10k+ parts

$0.277

785

$0.288

-

-

$0.277

Northwest PG Solutions

USA . 1,826 parts In-Stock

1+ parts

$0.317

100+ parts

-

1k+ parts

-

10k+ parts

$0.280

1,826

$0.317

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-

$0.280

IDEA Electronic Components Group

UK . 2,029 parts In-Stock

1+ parts

$0.955

100+ parts

-

1k+ parts

$0.859

10k+ parts

-

2,029

$0.955

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$0.859

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MKK Technologies

India . 1,637 parts In-Stock

1+ parts

$1.796

100+ parts

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1,637

$1.796

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DigiPath Technology Company

USA . 1,637 parts In-Stock

1+ parts

$1.796

100+ parts

-

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1,637

$1.796

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Corphita

USA . 4,482 parts In-Stock

1+ parts

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4,482

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Parana Technologies

USA . 25 parts In-Stock

1+ parts

-

100+ parts

$1.142

1k+ parts

-

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25

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$1.142

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Overview

Unleash the power of innovation with the 2STR1230G by STMicroelectronics. Designed to deliver exceptional performance and durability, this small signal bipolar junction transistor (BJT) is a game-changer in the world of switching applications. With a maximum collector-emitter voltage of 30V and a maximum collector current of 1.5A, this NPN transistor offers unparalleled reliability and efficiency. Whether you're a seasoned professional or a DIY enthusiast, the 2STR1230G is the perfect choice for all your electronic projects. Trust STMicroelectronics to provide top-notch quality and cutting-edge technology that will take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in the amplification and switching circuits, making this product versatile.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easy to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability ensures easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement on the PCB, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure secure connection in the circuit.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuit designs and offers flexibility in connections.

Maximum Power Dissipation (Abs): 0.5 W

The transistor can handle up to 0.5W of power dissipation, suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for denser circuit designs.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 30 V

A maximum collector-emitter voltage of 30V allows for safe operation in voltage-sensitive circuits.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures efficient performance and long-term reliability.

Maximum Collector Current (IC): 1.5 A

Capable of handling up to 1.5A of collector current, suitable for medium power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and ensures a reliable connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections and layout designs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering without damage.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and reliability in assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2STR1230G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STR1230G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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